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SUZHOU FENGHUANGXIN ELECTRONIC TECH CO LTD

Overview
  • Total Patents
    12
  • GoodIP Patent Rank
    147,700
  • Filing trend
    0.0%
About

SUZHOU FENGHUANGXIN ELECTRONIC TECH CO LTD has a total of 12 patent applications. It increased the IP activity by 0.0%. Its first patent ever was published in 2017. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are SHIMABUN KK, NO 771 INST OF NO 9 ACADEMY OF CHINA AEROSPACE SCIENCE AND TECHNOLOGY CORP and FORMOSA MICROSEMI CO LTD.

Patent filings in countries

World map showing SUZHOU FENGHUANGXIN ELECTRONIC TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 12

Patent filings per year

Chart showing SUZHOU FENGHUANGXIN ELECTRONIC TECH CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Chen Yanhao 8
#2 Wu Zongxian 7
#3 Wang Yucheng 4
#4 Zhang Yanwang 2
#5 Qian Zhenhua 2

Latest patents

Publication Filing date Title
CN111668291A Silicon carbide two-stage tube device with surge resistance and manufacturing method thereof
CN111668290A Stepped trench silicon carbide JBS two-stage tube device structure and manufacturing method thereof
CN111668289A Groove silicon carbide JBS two-stage tube device structure and manufacturing method thereof
CN111584618A Schottky two-stage tube with stepped ring structure and manufacturing method thereof
CN111653609A JBS two-stage tube device structure with stepped structure and manufacturing method thereof
CN110690272A SJ MOS device structure combined with shielding grid and manufacturing method thereof
CN110739346A SJ MOS device terminal structure with shielding grid and manufacturing method thereof
CN110707155A Shielding grid MOS structure capable of improving reverse recovery characteristic and manufacturing method thereof
CN108538721A A kind of IGBT device back side production method
CN108428631A A kind of RC-IGBT devices back side production method
CN107634093A A kind of shield grid MOS structure with gradual change oxide layer
CN107681006A A kind of shield grid MOS structure with stairstepping oxide layer