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FORMOSA MICROSEMI CO LTD

Overview
  • Total Patents
    20
  • GoodIP Patent Rank
    177,797
  • Filing trend
    ⇩ 100.0%
About

FORMOSA MICROSEMI CO LTD has a total of 20 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2003. It filed its patents most often in Taiwan, China and United States. Its main competitors in its focus markets semiconductors are JIAXING STARPOWER MICROELECTRONICS CO LTD, SHANGHAI SVA NEC LIQUID CRYSTAL DISPLAY CO LTD and SHENZHEN JINGTE ZHIZAO TECH CO LTD.

Patent filings in countries

World map showing FORMOSA MICROSEMI CO LTDs patent filings in countries
# Country Total Patents
#1 Taiwan 9
#2 China 8
#3 United States 3

Patent filings per year

Chart showing FORMOSA MICROSEMI CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Huang Wen-Bin 6
#2 Huang Wenbin 6
#3 Wu Wen-Hu 5
#4 Wu Wenhu 5
#5 Lai Xibiao 3
#6 Chen Jianwu 3
#7 Huang Wen-Ping 3
#8 Lin Hui-Min 3
#9 Chen Jian-Wu 3
#10 Lai Xi-Biao 3

Latest patents

Publication Filing date Title
TW201822322A Flip-chip package rectification/protection diode element with multiple chip stacks capable of reducing the height of diode element and extending the number of flip-chips based on voltage resistance requirements
CN108231699A Chip package diode element with multiple grain structures
CN107622956A Possess the crystallite dimension encapsulation diode element and manufacture method of ultralow forward voltage
TW201804539A Chip scale package diode element with ultralow forward voltage and manufacturing method thereof avoiding the internal resistance to reduce the forward voltage
CN104979460A Flip-chip type LED component with built-in ZENER chip
TW201537785A Flip-chip type LED component built therein with Zener chip
CN103295897A Well-through type diode element or diode assembly and method for manufacturing well-through type diode element or diode assembly
TW201336090A Well-through type diode component/module and its manufacturing method
CN102956512A Flip-chip type semiconductor full-wave rectifying element and production method thereof
CN102931238A Constant-current semiconductor element with Schottky barrier
TW201308409A Flip chip type full wave rectification semiconductor device and its method of manufacturing
TW201306253A Contant current semiconductor device with schottky barrier structure
CN102201368A Production method and structure of silicon chip and substrate co-constructed surface adhesive diode element
TW201131670A Manufacturing method and structure of surface mount diode component of silicon chip-substrate integrated packaging
CN1731576A Power semiconductor composed by duplex-metal and china and its manufacturing method
TW200605284A Power semiconductor structure of bimetal and ceramic composition and its manufacture method
US2005259400A1 Heat sinking structure of power semiconductor
TW200507126A Metal ceramic co-firing structure and manufacturing method for surface mount diode