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SUPER NOVA OPTOELECTRONICS CORP

Overview
  • Total Patents
    13
About

SUPER NOVA OPTOELECTRONICS CORP has a total of 13 patent applications. Its first patent ever was published in 2002. It filed its patents most often in Taiwan and China. Its main competitors in its focus markets semiconductors and machines are TRAN LUAN C, VISUAL PHOTONICS EPITAXY CO LT and CHANG PETER L D.

Patent filings in countries

World map showing SUPER NOVA OPTOELECTRONICS CORPs patent filings in countries
# Country Total Patents
#1 Taiwan 12
#2 China 1

Patent filings per year

Chart showing SUPER NOVA OPTOELECTRONICS CORPs patent filings per year from 1900 to 2020

Focus industries

Focus technologies

Top inventors

# Name Total Patents
#1 Hon Schang-Jing 10
#2 Lai Mu-Jen 6
#3 Huang Jenn-Bin 3
#4 Wang Alexander Chan 2
#5 Yih Nai-Guann 2
#6 Su Hwa 2
#7 Muren Lai 1
#8 Chen Wei-Lin 1
#9 Li Ren-Zhi 1
#10 Peng Rui-Qi 1

Latest patents

Publication Filing date Title
TW201042783A Light emitting component equips with anti-static discharge feature
TW200635077A GaN-based light emitting diode with polarization inverted layer
TWI236311B Detection process system for detecting light efficiency decay and method thereof
CN1667842A Structure of gallium nitride family light-emitting diode and process for making same
TW200529464A Gallium nitride based light-emitting diode structure and manufacturing method thereof
TW200525779A White-like light emitting device and its manufacturing method
TWI232016B Gallium nitride vertical light emitting diode structure and method of separating a substrate and a thin film in the structure
TWI227571B Gallium nitride based light-emitting device and the fabricating method for the same
TWI228839B LED with screen metal conductive layer and method for producing the same
TW200409063A LED dot matrix display module
TW200409378A GaN-based light-emitting diode and the manufacturing method thereof
TW584974B GaN-based Ⅲ-Ⅴ group compound semiconductor light-emitting diode and the manufacturing method thereof
TW573372B GaN-based Ⅲ-Ⅴ group compound semiconductor light-emitting diode and the manufacturing method thereof