| # | Country | Total Patents | |
|---|---|---|---|
| #1 | WIPO (World Intellectual Property Organization) | 6 | |
| #2 | Germany | 3 | |
| #3 | Japan | 1 | |
| #4 | United States | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Measurement | |
| #3 | Surface technology and coating | |
| #4 | Machine tools | |
| #5 | Machines |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Measuring light | |
| #3 | Coating metallic material | |
| #4 | Single-crystal-growth | |
| #5 | Soldering, welding and flame cutting | |
| #6 | Shaping of plastics |
| # | Name | Total Patents |
|---|---|---|
| #1 | Walk Heinrich | 5 |
| #2 | Hauf Markus | 5 |
| #3 | Knarr Thomas | 4 |
| #4 | Lerch Wilfried | 3 |
| #5 | Balthasar Horst | 3 |
| #6 | Mueller Uwe | 3 |
| #7 | Walk Ulrich | 2 |
| #8 | Nenyei Zsolt | 2 |
| #9 | Aschner Helmut | 2 |
| #10 | Zernickel Dieter | 2 |
| Publication | Filing date | Title |
|---|---|---|
| DE19934299A1 | Method and device for calibrating emissivity-independent temperature measurements | |
| DE19855683A1 | Method of measuring electromagnetic radiation | |
| WO9927563A1 | Rapid thermal processing (rtp) system with gas driven rotating substrate | |
| WO9921219A1 | Method of oxidation of semiconductor wafers in a rapid thermal processing (rtp) system | |
| WO9901895A1 | Method for rapid thermal processing (rtp) of a silicon substrate | |
| DE19737802A1 | Thermal treatment especially of semiconductor wafers |