Producing silicon from silicon and/or silicon oxide containing a starting material in a reaction vessel, comprises finishing the reaction vessel and obtaining the silicon by an inductive heating of the starting material
DE102012003903A1
Process for the thermal treatment of silicon carbide substrates
DE102012001347A1
Transport device for simultaneously transporting planar substrates e.g. metal sheet for semiconductor manufacture, has drive apparatus that drives planar substrate along transportation path arranged underneath side of transport rollers
DE102011117869A1
Device for drawing vacuum partly consisting of semiconductor material for thermal treatment of silicon substrate, has plate elements having sub apertures that are communicated with vacuum chamber and arranged for suction of substrate
DE102011109648A1
Gripper of robot for gripping or holding disc-shaped substrate, has base having surface from which spacers project, to guide fluid to flow along surface to opening
DE102011109647A1
Apparatus for displacing and/or pivoting of gripper used for holding disk-shaped substrates, has a specific moving unit which is controlled such that pivoting of specific support unit is caused relative to the other support unit
DE102011107072B3
METHOD FOR FORMING AN OXIDE LAYER ON A SUBSTRATE AT DEEP TEMPERATURES
DE102011100024A1
METHOD FOR FORMING A LAYER ON A SUBSTRATE
DE102011100057A1
Plasma treatment device for treating e.g. semiconductor substrate, has electrodes arranged in pairs with same distance from center plane of chamber such that microwaves of electrodes are partially offset with respect to each other
DE102011014311A1
Introducing a process gas into a process space of a process chamber, by warming a process chamber, a substrate received in the process chamber and/or a process chamber-heating device, and heating inlet tube over the process chamber
DE102011009693A1
Cooling module and device for the thermal treatment of substrates
DE102010052420A1
Continuous reheating furnace for manufacturing direct copper bonding-substrate, has running rollers provided at high temperature region of muffle for transporting direct copper bonding-substrate, and bearing that bears running rollers
DE102010033303A1
Device for closing and opening a loading / unloading opening of a process chamber
DE102010026610A1
Vacuum suction unit and gripper
DE102010025483A1
Method and apparatus for calibrating a wafer transport robot
DE102010012079A1
Heating device for thermal treating of semiconductor substrate in quartz tube, has connection element including three portions with respective cross section areas, where area of one of portions is smaller than that of other two portions
DE102010011156A1
Device for the thermal treatment of semiconductor substrates
DE102009036320A1
Connectors for gas or liquid pipes and their use
TW200931537A
Method and arrangement for tempering SiC wafers
EP1474260A1
Radiant heating method and assembly for a multi-chamber vacuum-soldering system
