CN112216610A
|
|
Preparation method of HEMT (high electron mobility transistor) based on sapphire substrate
|
CN111769036A
|
|
Preparation method of gallium nitride single crystal substrate
|
CN111607784A
|
|
Drainage rotation type substrate bears device and vapor phase epitaxy equipment
|
CN111681946A
|
|
Preparation method of gallium nitride single crystal substrate
|
CN111128688A
|
|
Method for manufacturing n-type gallium nitride self-supporting substrate
|
CN110534477A
|
|
The integrated equipment of laser lift-off
|
CN112151355A
|
|
Method for manufacturing gallium nitride self-supporting substrate
|
CN110102877A
|
|
The laser lift-off device and method of liquid metal auxiliary heat conduction
|
CN110085537A
|
|
The device for high-temperature laser removing of temperature-controllable
|
CN109675828A
|
|
A kind of method for separating of low aberration
|
CN109468680A
|
|
A kind of gas preheating unit applied to hydride gas-phase epitaxy equipment
|
CN108302113A
|
|
A kind of hollow shaft device with refrigerating function
|
CN108321115A
|
|
A kind of support boat structure for wafer epitaxial substrate Material growth
|
CN108118390A
|
|
A kind of method and apparatus for improving III- nitride material doping efficiencies in HVPE
|
CN108048901A
|
|
A kind of nozzle structure of hydride gas-phase epitaxy
|
CN107740182A
|
|
A kind of hydride gas-phase epitaxy equipment for improving reaction chamber clean-up performance
|
CN107221496A
|
|
A kind of surface treatment method after nitride material laser lift-off
|
CN107134406A
|
|
A kind of method for preparing nitride self-supported substrate
|
CN106910675A
|
|
A kind of compound substrate for preparing nitride electronic devices and preparation method thereof
|
CN106956211A
|
|
A kind of single-sided polishing device
|