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SINO NITRIDE SEMICONDUCTOR CO

Overview
  • Total Patents
    138
  • GoodIP Patent Rank
    17,110
  • Filing trend
    ⇩ 55.0%
About

SINO NITRIDE SEMICONDUCTOR CO has a total of 138 patent applications. It decreased the IP activity by 55.0%. Its first patent ever was published in 2009. It filed its patents most often in China, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets semiconductors, surface technology and coating and machine tools are NANOGAN LTD, CRYSTALWISE TECHNOLOGY INC and SCIOCS CO LTD.

Patent filings per year

Chart showing SINO NITRIDE SEMICONDUCTOR COs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Zhang Guoyi 107
#2 Tong Yuzhen 46
#3 Liu Peng 43
#4 Sun Yongjian 32
#5 Zhao Hongjun 30
#6 Jia Chuanyu 20
#7 Zhang Junye 17
#8 Liu Nanliu 17
#9 Yin Shuyi 16
#10 Chen Jiao 13

Latest patents

Publication Filing date Title
CN112216610A Preparation method of HEMT (high electron mobility transistor) based on sapphire substrate
CN111769036A Preparation method of gallium nitride single crystal substrate
CN111607784A Drainage rotation type substrate bears device and vapor phase epitaxy equipment
CN111681946A Preparation method of gallium nitride single crystal substrate
CN111128688A Method for manufacturing n-type gallium nitride self-supporting substrate
CN110534477A The integrated equipment of laser lift-off
CN112151355A Method for manufacturing gallium nitride self-supporting substrate
CN110102877A The laser lift-off device and method of liquid metal auxiliary heat conduction
CN110085537A The device for high-temperature laser removing of temperature-controllable
CN109675828A A kind of method for separating of low aberration
CN109468680A A kind of gas preheating unit applied to hydride gas-phase epitaxy equipment
CN108302113A A kind of hollow shaft device with refrigerating function
CN108321115A A kind of support boat structure for wafer epitaxial substrate Material growth
CN108118390A A kind of method and apparatus for improving III- nitride material doping efficiencies in HVPE
CN108048901A A kind of nozzle structure of hydride gas-phase epitaxy
CN107740182A A kind of hydride gas-phase epitaxy equipment for improving reaction chamber clean-up performance
CN107221496A A kind of surface treatment method after nitride material laser lift-off
CN107134406A A kind of method for preparing nitride self-supported substrate
CN106910675A A kind of compound substrate for preparing nitride electronic devices and preparation method thereof
CN106956211A A kind of single-sided polishing device