|
TW201933585A
|
|
Forming method of three dimensional integrated circuit
|
|
US2018350785A1
|
|
Three dimensional integrated circuit
|
|
US2018175008A1
|
|
Three dimensional integrated circuit
|
|
US2018082989A1
|
|
Three dimensional integrated circuit
|
|
US2016204088A1
|
|
Three dimensional integrated circuit
|
|
US2015155422A1
|
|
Substrate cleaving under controlled stress conditions
|
|
US2015044447A1
|
|
Cleaving thin layer from bulk material and apparatus including cleaved thin layer
|
|
JP2014138189A
|
|
Controlled process and resulting device
|
|
US2013292691A1
|
|
Techniques for forming optoelectronic devices
|
|
US2013209740A1
|
|
Method of cleaving a thin sapphire layer from a bulk material by implanting a plurality of particles and performing a controlled cleaving process
|
|
US2013143389A1
|
|
Controlled process and resulting device
|
|
WO2010132706A1
|
|
Techniques for forming thin films by implantation with reduced channeling
|
|
US7811901B1
|
|
Method and edge region structure using co-implanted particles for layer transfer processes
|
|
WO2009046306A1
|
|
Accelerator particle beam apparatus and method for low contaminate processing
|
|
SG144883A1
|
|
Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials
|
|
US2009042369A1
|
|
Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials
|
|
US2008188011A1
|
|
Apparatus and method of temperature conrol during cleaving processes of thick film materials
|
|
US2009152162A1
|
|
Carrier apparatus and method for shaped sheet materials
|
|
TW200832485A
|
|
Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
|
|
US2008128641A1
|
|
Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
|
