Learn more

QINGDAO LONGSHENG CRYSTALLINE SILICON TECHNOLOGY C

Overview
  • Total Patents
    23
  • GoodIP Patent Rank
    209,674
About

QINGDAO LONGSHENG CRYSTALLINE SILICON TECHNOLOGY C has a total of 23 patent applications. Its first patent ever was published in 2013. It filed its patents most often in China. Its main competitors in its focus markets surface technology and coating are HARBIN AURORA OPTOELECTRONICS TECHNOLOGY CO LTD, SHANGHAI LANGZHAO ELECTROMECHANICAL EQUIPMENT CO LTD and INST FIZ I AN ARMSSR.

Patent filings in countries

World map showing QINGDAO LONGSHENG CRYSTALLINE SILICON TECHNOLOGY Cs patent filings in countries
# Country Total Patents
#1 China 23

Patent filings per year

Chart showing QINGDAO LONGSHENG CRYSTALLINE SILICON TECHNOLOGY Cs patent filings per year from 1900 to 2020

Focus industries

Focus technologies

# Technology
#1 Single-crystal-growth

Top inventors

# Name Total Patents
#1 Tan Yi 21
#2 Wang Dengke 13
#3 Jiang Dachuan 13
#4 An Guangye 11
#5 Guo Xiaoliang 9
#6 Zhang Lei 8
#7 Hou Zhenhai 7
#8 Liu Yao 4
#9 Ren Shiqiang 3
#10 Zhang Xiaofeng 3

Latest patents

Publication Filing date Title
CN104480526A Preparation method of high-borosilicate material
CN104502416A Method for testing yield of silicon ingot purification process
CN104404618A Ingot casting process capable of reducing inefficient piece proportion of polycrystalline silicon battery piece
CN104726934A Efficient ingot casting semi-melting technology capable of achieving low dislocation density
CN104649277A Method for removal of impurity oxygen from polycrystalline silicon ingot base material by electron beam melting
CN104649274A Method for removing oxygen impurities in polysilicon through electron beam continuous melting, and apparatus thereof
CN104651929A Electron beam melting polysilicon deoxygenation and ingot casting coupling method and apparatus thereof
CN103738965A Method for removal of oxygen from liquid silicon by electron beam melting and device thereof
CN104651930A Apparatus for preparing polysilicon through electron beam deoxygenation and preliminary ingot casting coupling, and method thereof
CN104649276A Method and device for efficient removal of impurity oxygen from polysilicon by electron beam melting
CN104649275A Method for removing oxygen from silicon material by electron beam low frequency bombardment
CN103420380A Method and device for manufacturing polycrystalline silicon by coupling electron beam smelting technology and directional solidification technology
CN103435043A Device and process method for preparing polycrystalline silicon through coupling of electron beam smelting and crystal growing technology
CN103411808A Pretreatment method for detecting boron impurities of titanium dioxide
CN103395789A Preliminary directional solidification process after polysilicon medium melting
CN103387416A Method for prolonging service life of graphite crucible in medium smelting
CN103361737A Double annealing process for reducing back diffusion of impurity in polysilicon ingot
CN103351002A Polysilicon directional solidification device
CN104276573A slogging agent for polysilicon medium melting and usage method thereof
CN104276572A Slagging agent for melting of polysilicon medium and application method thereof