| # | Country | Total Patents | |
|---|---|---|---|
| #1 | EPO (European Patent Office) | 3 | |
| #2 | China | 2 | |
| #3 | Republic of Korea | 2 | |
| #4 | United States | 2 | |
| #5 | WIPO (World Intellectual Property Organization) | 2 | |
| #6 | Japan | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Materials and metallurgy | |
| #3 | Surface technology and coating |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Building materials | |
| #3 | Single-crystal-growth |
| # | Name | Total Patents |
|---|---|---|
| #1 | Minami Akiyuki | 7 |
| #2 | Shimo Toshihisa | 6 |
| #3 | Imaoka Ko | 6 |
| #4 | Kobayashi Motoki | 6 |
| #5 | Yagi Kuniaki | 6 |
| #6 | Uchida Hidetsugu | 6 |
| #7 | Murasaki Takanori | 5 |
| #8 | Uchida Eiji | 1 |
| #9 | Kawahara Takamitsu | 1 |
| #10 | Imaoka Isao | 1 |
| Publication | Filing date | Title |
|---|---|---|
| US2019153616A1 | Polycrystalline SiC substrate and method for manufacturing same | |
| JP2018014372A | Semiconductor substrate |