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AZZURRO SEMICONDUCTORS AG

Overview
  • Total Patents
    62
  • GoodIP Patent Rank
    201,027
About

AZZURRO SEMICONDUCTORS AG has a total of 62 patent applications. Its first patent ever was published in 2000. It filed its patents most often in Germany, EPO (European Patent Office) and Republic of Korea. Its main competitors in its focus markets semiconductors, surface technology and coating and computer technology are UBILUX OPTOELECTRONICS CORP, DARGIS RYTIS and YOKOYAMA TAKASHI.

Patent filings per year

Chart showing AZZURRO SEMICONDUCTORS AGs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Dadgar Armin 35
#2 Krost Alois 34
#3 Alois Krost 6
#4 Armin Dadgar 6
#5 Murad Saad 5
#6 Dadgar Armin Dr 4
#7 Alois Crauste 4
#8 Krost Alois Prof Dr 4
#9 Armin Dassler 4
#10 Chitnis Ashay 3

Latest patents

Publication Filing date Title
EP2945185A1 Epitaxial wafers avoiding edge melt-back-etching and method for fabricating the same
EP2860769A1 Layer structure for surface-emitting thin-film p-side-up light-emitting diode
EP2800139A1 Layer sequence for an electronic device
EP2495772A1 Semiconductor light emitter device
DE102010056409A1 Group III nitride based layer sequence, semiconductor device comprising a group III nitride based layer sequence and methods of fabrication
DE102007020979A1 A nitride semiconductor device having a group III nitride layer structure on a group IV substrate surface of at most twofold symmetry
KR20150123294A Nitride semiconductor component and method for the production thereof
DE102006062647A1 Group III nitride semiconductor device with high p-type layer and manufacturing method
DE102006057064A1 Application process for epitactic Group III nitride layer involves depositing Group III nitride layer on reconstructed surface of semiconductor
DE102006030305B3 Semiconductor device, useful e.g. in field-effect transistors, comprises an aluminum-gallium-indium-nitrogen layer, aluminum-gallium-nitrogen intermediate layer, and another aluminum-gallium-indium-nitrogen layer
WO2006117402A1 Security feature
DE102006008929A1 Layer structure production for nitride semiconductor component on silicon surface, involves preparation of substrate having silicon surface on which nitride nucleation layer is deposited with masking layer
DE102005021815A1 Object e.g. security paper, security feature, has multi-layer system of semiconducting piezoelectric materials having different band gap energies in such a manner that signal response depends on frequency of high frequency radiation
DE102004055636A1 Production of semiconductor elements for Bragg reflector involves growing epitaxial aluminum indium nitride layers, and changing aluminum-to-indium ratio during growth process
DE102004050806A1 Process for the preparation of (Al, Ga) N single crystals
DE102004038573A1 Epitaxially growing thick tear-free group III nitride semiconductor layers used in the production of modern opto-electronic and electronic components comprises using an aluminum-containing group III nitride intermediate layer
DE10256911A1 Group III nitride transistor device on silicon substrate
DE10151092A1 Method for producing planar and crack-free Group III nitride-based light emitting structures on silicon substrate
DE10056645A1 Process for the preparation of crack-free, planar group-III-N, group III-V-N and metal-nitrogen device structures on Si substrates by epitaxial methods