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DARGIS RYTIS

Overview
  • Total Patents
    18
  • GoodIP Patent Rank
    175,013
  • Filing trend
    ⇩ 100.0%
About

DARGIS RYTIS has a total of 18 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2011. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, surface technology and coating and machines are UBILUX OPTOELECTRONICS CORP, AZZURRO SEMICONDUCTORS AG and YOKOYAMA TAKASHI.

Patent filings in countries

World map showing DARGIS RYTISs patent filings in countries
# Country Total Patents
#1 United States 18

Patent filings per year

Chart showing DARGIS RYTISs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Dargis Rytis 18
#2 Clark Andrew 18
#3 Arkun Erdem 12
#4 Lebby Michael 10
#5 Smith Robin 5
#6 Pham Nam 4
#7 Roucka Radek 3
#8 Pelzel Rodney 1

Latest patents

Publication Filing date Title
US2016181093A1 Iii-n epitaxy on multilayer buffer with protective top layer
US2015069409A1 Heterostructure with carrier concentration enhanced by single crystal REO induced strains
US9142406B1 III-N material grown on ErAlN buffer on Si substrate
US2015228484A1 Method of growing III-N semiconductor layer on Si substrate
US2015203990A1 REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate
US8796121B1 Stress mitigating amorphous SiO2 interlayer
US8846504B1 GaN on Si(100) substrate using epi-twist
US2015014676A1 III-N material grown on REN epitaxial buffer on Si substrate
US2014239307A1 REO gate dielectric for III-N device on Si substrate
US2014008644A1 Oxygen engineered single-crystal REO template
US8394194B1 Single crystal reo buffer on amorphous SiOx
US2012280276A1 Single Crystal Ge On Si
US2012183767A1 Hexagonal reo template buffer for iii-n layers on silicon
US2013099357A1 Strain compensated reo buffer for iii-n on silicon