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BEIJING CENTURY GOLDRAY SEMICONDUCTOR CO LTD

Overview
  • Total Patents
    37
  • GoodIP Patent Rank
    41,939
  • Filing trend
    ⇩ 66.0%
About

BEIJING CENTURY GOLDRAY SEMICONDUCTOR CO LTD has a total of 37 patent applications. It decreased the IP activity by 66.0%. Its first patent ever was published in 2015. It filed its patents most often in China, WIPO (World Intellectual Property Organization) and United States. Its main competitors in its focus markets semiconductors, surface technology and coating and materials and metallurgy are SICOXS CORP, WANG CHUWEN and YOKOYAMA TAKASHI.

Patent filings in countries

World map showing BEIJING CENTURY GOLDRAY SEMICONDUCTOR CO LTDs patent filings in countries

Patent filings per year

Chart showing BEIJING CENTURY GOLDRAY SEMICONDUCTOR CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Ni Weijiang 23
#2 Yuan Jun 20
#3 Xu Miaoling 18
#4 Zhang Jingwei 14
#5 Li Mingshan 13
#6 Niu Xiping 12
#7 Sun Anxin 12
#8 Huang Xing 9
#9 Lu Xiaodong 7
#10 Ji Sha 6

Latest patents

Publication Filing date Title
CN112010311A Method for treating prefabricated material for high-purity silicon carbide powder
CN111812359A General dipulse test fixture of SiC MOSFET
CN111755497A JTE and buried FLR composite terminal structure power device and preparation method thereof
CN111725291A JTE embedded multi-groove composite terminal structure power device and manufacturing method
CN111653626A Silicon carbide deep groove super junction SBD device and preparation method
CN108493232A A kind of mixing section terminal protection structure and preparation method thereof that Spatial dose modulation JTE is constituted with field wire ring
CN108365028A A kind of silicon carbide device surface wool manufacturing method
CN108063167A A kind of silicon carbide SBD device structure cell with multistage groove
CN108198857A A kind of silicon carbide MOSFET device structure cell of integrated convex block shape Schottky diode
CN108102554A A kind of polishing fluid for removing silica dioxide granule
CN108122995A A kind of groove-shaped double potential barrier Schottky diode and preparation method thereof
CN108063090A A kind of low barrier Schottky diode and preparation method thereof
CN108198866A A kind of groove-shaped low barrier Schottky diode and preparation method thereof
CN108010958A It is a kind of that there is the silicon carbide SBD device for burying suspend knot and periphery deep trench protection structure
CN107706096A A kind of silicon carbide power chip back is thinned and prepared the method and product of Ohmic contact
CN107649785A A kind of wafer thining method and device
CN107342338A A kind of ultraviolet the snowslide drifting detector and detection method of more drift ring structures
CN106981509A A kind of multilayer metallic electrode structure of silicon carbide power device
CN106816437A A kind of SiC crystal tube device of integrated current sensors and preparation method thereof
CN106960852A Ultraviolet avalanche photodiode detector and its detection method with drift channel