Learn more

SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCIENCE & TECH CO LTD

Overview
  • Total Patents
    11
  • GoodIP Patent Rank
    156,795
  • Filing trend
    ⇩ 100.0%
About

SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCIENCE & TECH CO LTD has a total of 11 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2017. It filed its patents most often in China. Its main competitors in its focus markets semiconductors and optics are QUANZHOU SANAN SEMICONDUCTOR TECH CO LTD, SHURAI KAGI KOFUN YUGENKOSHI and ASTRALUX INC.

Patent filings in countries

World map showing SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCIENCE & TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 11

Patent filings per year

Chart showing SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCIENCE & TECH CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors
#2 Optics

Top inventors

# Name Total Patents
#1 Guan Yongli 11
#2 Mi Honglong 9
#3 Liang Jian 7
#4 Wang Lin 6
#5 Dong Hailiang 6
#6 Xu Bingshe 5
#7 Jia Zhigang 5
#8 Shan Zhifang 4
#9 Yang Xin 4
#10 Zhou Wangkang 3

Latest patents

Publication Filing date Title
CN111276582A Epitaxial structure of 940nm infrared LED and preparation method thereof
CN111430512A Preparation method of coarsened AlGaAs base L ED and L ED
CN111081535A Growth method of U-shaped GaN layer, U-shaped GaN layer and semiconductor transistor
CN109904289A LED and preparation method thereof based on superlattices potential barrier quantum well structure
CN109802021A InGaN light emitting diode with quantum dots and preparation method thereof
CN107732650A Gallium arsenide laser bar bar and preparation method thereof
CN107516698A GaAs base flip LED chips and preparation method thereof, LED display
CN107516818A Gallium arsenide laser Cavity surface and passivating method, gallium arsenide laser and preparation method
CN107482471A A kind of semiconductor laser bar bars and preparation method thereof
CN107658372A Deep etching Cutting Road flip LED chips and preparation method, LED display
CN107482094A LED based on GaN base axial direction nanometer stick array and preparation method thereof