KUB FRANCIS J has a total of 24 patent applications. Its first patent ever was published in 2011. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, micro-structure and nano-technology and optics are HIGH POWER OPTO INC, TOSHIBA DISCRETE TECHNOLOGY KK and SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCIENCE & TECH CO LTD.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 24 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Micro-structure and nano-technology | |
#3 | Optics | |
#4 | Materials and metallurgy | |
#5 | Surface technology and coating |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Nanostructure applications | |
#3 | Devices using light amplification | |
#4 | Non-metallic elements | |
#5 | Coating metallic material |
# | Name | Total Patents |
---|---|---|
#1 | Kub Francis J | 24 |
#2 | Anderson Travis J | 10 |
#3 | Hobart Karl D | 9 |
#4 | Eddy Jr Charles R | 7 |
#5 | Anderson Travis | 6 |
#6 | Feygelson Boris N | 5 |
#7 | Mastro Michael A | 5 |
#8 | Currie Marc | 4 |
#9 | Koehler Andrew D | 4 |
#10 | Hite Jennifer K | 3 |
Publication | Filing date | Title |
---|---|---|
US9246305B1 | Light-emitting devices with integrated diamond | |
US2014284552A1 | Graphene base transistor with reduced collector area | |
US2014264380A1 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | |
US2014110722A1 | Semiconductor structure or device integrated with diamond | |
US2013306988A1 | Diamond and diamond composite material | |
US2013306989A1 | Diamond and diamond composite material | |
US2013121362A1 | Infrared laser | |
US2013082241A1 | Graphene on semiconductor detector | |
US2012258587A1 | Method of forming graphene on a surface | |
US2012068157A1 | Transistor having graphene base |