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HIGH POWER OPTO INC

Overview
  • Total Patents
    54
  • GoodIP Patent Rank
    85,813
  • Filing trend
    ⇩ 20.0%
About

HIGH POWER OPTO INC has a total of 54 patent applications. It decreased the IP activity by 20.0%. Its first patent ever was published in 2007. It filed its patents most often in United States, China and Taiwan. Its main competitors in its focus markets semiconductors, optics and micro-structure and nano-technology are KUB FRANCIS J, SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCIENCE & TECH CO LTD and QUANZHOU SANAN SEMICONDUCTOR TECH CO LTD.

Patent filings in countries

World map showing HIGH POWER OPTO INCs patent filings in countries
# Country Total Patents
#1 United States 23
#2 China 22
#3 Taiwan 9

Patent filings per year

Chart showing HIGH POWER OPTO INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Chang Chih-Sung 27
#2 Yen Wei-Yu 24
#3 Chou Li-Ping 22
#4 Chen Fu-Bang 14
#5 Zhang Zhisong 11
#6 Chen Fubang 10
#7 Yan Weiyu 8
#8 Zhisong Zhang 6
#9 Chen Wan-Jou 6
#10 Yan Liang-Jyi 5

Latest patents

Publication Filing date Title
US2021075189A1 Surface-emitting laser structure with high heat dissipation
TWI694649B High-radiation surface-emitting laser structure
TWI676303B Light emittig chip and fabrication method thereof
TWI677150B Surface emitting laser light-emitting diode structure capable of improving operating speed with an excellent reflectance
US2019088823A1 Light emitting diode having continuous electrode structure
TWI632697B Light emitting diode with continuous electrode structure capable of effectively reducing the failure area of the insulating layer and enabling the edge of the light emitting diode to uniformly emit light
TWI631738B Photoelectric semiconductor device and method of manufacturing same
US9893254B1 Structure of high temperature resistant reflecting layer of light-emitting diode
TW201838207A High temperature resistant reflective layer structure of light emitting diode
US2016064602A1 Semiconductor light-emitting device and fabricating method thereof
US2016284945A1 High energy invisible light light emitting diode having safety indication
US9214601B1 Electroluminescent and photoluminescent multiband white light emitting diode
US2016111612A1 Light emitting diode having mirror protection layer and method for manufacturing mirror protection layer
CN105489729A Light emitting diode (LED) structure having reflector protective layer
US2014367726A1 Semiconductor light-emitting device and fabricating method thereof
TW201608736A Semiconductor light emitting device and fabricating method thereof
US2013328098A1 Buffer layer structure for light-emitting diode
US2013313598A1 Electrode contact structure of light-emitting diode with improved roughness
US2013307009A1 Reflection curved mirror structure of a vertical light-emitting diode
US2013307008A1 Continuous reflection curved mirror structure of a vertical light-emitting diode