|
CN104167492A
|
|
Perovskite battery and preparation method thereof
|
|
CN104091692A
|
|
Solar cell with high conversion efficiency and preparation method thereof
|
|
CN105097925A
|
|
Novel power device structure
|
|
CN105095550A
|
|
Parameterization unit for improving device matching features
|
|
CN105097788A
|
|
Novel inductor structure and implementation method
|
|
CN105097923A
|
|
Double-buried layer SOI high-voltage device
|
|
CN105097926A
|
|
Novel radio-frequency transistor layout structure
|
|
CN105095547A
|
|
Parameterized unit for improving device matching characteristic
|
|
CN105095548A
|
|
Parameterization unit for improving matching property of device
|
|
CN105097642A
|
|
Device structure capable of improving SOI heat-radiation characteristic
|
|
CN105093004A
|
|
Antistatic testing system protecting circuit
|
|
CN105097922A
|
|
Structure of SOI power LDMOS field effect transistor and manufacturing method thereof
|
|
CN105097732A
|
|
SOI high-voltage structure for reducing self-heating effect
|
|
CN105097927A
|
|
New device structure improving breakdown voltage of SOI device
|
|
CN105097928A
|
|
SOI device new structure
|
|
CN105093003A
|
|
Method for testing characteristic representing crosstalk between high voltage and low voltage
|
|
CN105093087A
|
|
ESD characteristic test system
|
|
CN105097924A
|
|
Power device structure
|
|
CN105097920A
|
|
SOI high-voltage device provided with stepped shielding groove voltage-resisting structure and double-drain-electrode structure
|
|
CN105097921A
|
|
VDMOS transistor structure and fabricating method thereof
|
