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PICOGIGA SA

Overview
  • Total Patents
    38
About

PICOGIGA SA has a total of 38 patent applications. Its first patent ever was published in 1990. It filed its patents most often in France, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets semiconductors, environmental technology and micro-structure and nano-technology are BEDELL STEPHEN W, TIANJIN SAN AN OPTOELECTRONICS CO LTD and SUZHOU NANOWIN SCIENCE AND TECHNOLOGY CO LTD.

Patent filings in countries

World map showing PICOGIGA SAs patent filings in countries

Patent filings per year

Chart showing PICOGIGA SAs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Nuyen Linh T 34
#2 Castagne Jean 3
#3 Chatelanaz Jean-Marc 2
#4 Chatelanaz Jean Marc 2
#5 Nuyen Trong Linh 2
#6 Nuyen Linh Trong 1
#7 Linh Nuyen Trong 1
#8 Bove Philippe 1
#9 Zerguine Djamal 1
#10 Jean Castagne 1

Latest patents

Publication Filing date Title
FR2834129A1 High cut frequency double heterojunction bipolar transistor
FR2795871A1 Heterojunction transistor iii-v, in particular hemt field-effect transistor or bipolar heterojunction transistor
WO9914809A1 Iii-v semiconductor component with heterojunction
FR2777116A1 SEMICONDUCTOR STRUCTURE OF PHOTOVOLTAIC COMPONENT
FR2775121A1 Method for manufacturing thin film substrates of semiconductor material, epitaxial structures of semiconductor material formed on such substrates, and components obtained from such structures
US5827751A Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically
FR2731109A1 III-V SEMICONDUCTOR COMPONENT AND ITS MANUFACTURING METHOD
EP0591501A1 Integrated circuit with complementary heterojunction field effect transistors
EP0623244A1 Quantum well p-channel field effect transistor, and integrated circuit having complementary transistors
FR2694132A1 P-channel field effect transistor with quantum well, and integrated circuit with complementary transistors.
FR2690278A1 Multispectral photovoltaic component with cell stack, and production method.
FR2690279A1 Multispectral photovoltauic component.
FR2690276A1 IC with complementary heterojunction field effect transistors
FR2686455A1 Heterojunction, p-channel, field-effect transistor, and integrated circuit with complementary transistors
FR2686456A1 INFRARED DETECTOR WITH QUANTUM WELLS.
FR2684800A1 Method for producing semiconductor components with electrochemical substrate recovery.
FR2684806A1 FIELD EFFECT TRANSISTOR TYPE SEMICONDUCTOR COMPONENT, ESPECIALLY HETEROJUNCTION.
FR2684801A1 PROCESS FOR PRODUCING SEMICONDUCTOR COMPONENTS, ESPECIALLY ON GAAS OR INP, WITH CHEMICAL RECOVERY OF THE SUBSTRATE.
FR2662544A1 Heterojunction field effect transistor.