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YANGZHOU HY TECHNOLOGY DEV CO LTD

Overview
  • Total Patents
    16
  • GoodIP Patent Rank
    151,817
About

YANGZHOU HY TECHNOLOGY DEV CO LTD has a total of 16 patent applications. Its first patent ever was published in 2012. It filed its patents most often in China and Taiwan. Its main competitors in its focus markets semiconductors and environmental technology are SHANGHAI PN STONE PHOTOELECTRIC CO LTD, GUANGDONG SINODISPLAY TECH CO and SAMCO INTERNAT INC.

Patent filings in countries

World map showing YANGZHOU HY TECHNOLOGY DEV CO LTDs patent filings in countries
# Country Total Patents
#1 China 15
#2 Taiwan 1

Patent filings per year

Chart showing YANGZHOU HY TECHNOLOGY DEV CO LTDs patent filings per year from 1900 to 2020

Focus industries

Top inventors

# Name Total Patents
#1 Fang Dingyu 9
#2 Wang Daoqiang 3
#3 Wang Qiuxu 3
#4 Xue Mingfeng 3
#5 Liu Ying 2
#6 Yin Jianwei 2
#7 Wang Yongfeng 2
#8 Chen Hongyin 2
#9 Chen Yi 1
#10 Wang Dongliang 1

Latest patents

Publication Filing date Title
CN105047639A Method for processing power semiconductor module lead terminal
TW201541565A A whole structure of an intelligent power semiconductor module having an integrated heat sink
CN104157563A Novel treatment method for silicon oxide layer after sintering
CN104112651A Rectifier chip making process
CN104112661A Cutting technology processing method
CN104046989A Novel method for preprocessing electrotinned glue-filled product
CN104576419A CELL chip producing process
CN104009713A Circuit device capable of automatically recognizing hot spot effect of photovoltaic cell panel assembly
CN104562055A Novel nickel stripping treatment method
CN103981552A Novel post-processing method for silver-plated copper particles
CN103981551A Processing method of brass product before electroplating nickel
CN103695976A Treatment method for copper product before electronickelling
CN103500724A Prewelding method for Schottky grains
CN103382565A Copper plating method and electroplating method of brass cast
CN102945856A Reverse conducting IGBT (insulated gate bipolar transistor) structure and preparation method thereof
CN102581410A Soldering process for diode chip