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CHANG LELAND

Overview
  • Total Patents
    37
About

CHANG LELAND has a total of 37 patent applications. Its first patent ever was published in 2006. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, computer technology and electrical machinery and energy are EL-KAREH BADIH, CHEN SHIH-HUNG and YANGTZE MEMORY TECHNOLOGIES CO LTD.

Patent filings in countries

World map showing CHANG LELANDs patent filings in countries
# Country Total Patents
#1 United States 37

Patent filings per year

Chart showing CHANG LELANDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Chang Leland 37
#2 Sleight Jeffrey W 20
#3 Lauer Isaac 14
#4 Montoye Robert K 8
#5 Lin Chung-Hsun 8
#6 Ji Brian L 4
#7 Mo Renee T 3
#8 Sleight Jeffrey 3
#9 Young Albert M 2
#10 Wang Naigang 2

Latest patents

Publication Filing date Title
US2014049934A1 Slab inductor device providing efficient on-chip supply voltage conversion and regulation
US8493093B1 Time division multiplexed limited switch dynamic logic
US2013260525A1 Low extension dose implants in SRAM fabrication
US2013223121A1 Sense scheme for phase change material content addressable memory
US2013176769A1 8-transistor SRAM cell design with Schottky diodes
US2013176770A1 8-transistor SRAM cell design with inner pass-gate junction diodes
US2013176771A1 8-transistor SRAM cell design with outer pass-gate diodes
US2012268985A1 Resonance nanoelectromechanical systems
US2014310220A1 Electronic synapses for reinforcement learning
US2010327376A1 Process to fabricate a metal high-K transistor having first and second silicon sidewalls for reduced parasitic capacitance
US2011298440A1 Low voltage signaling
US2011284962A1 High performance devices and high density devices on single chip
US2011191737A1 Generation of asymmetric circuit devices
US2011108900A1 Bi-directional self-aligned FET capacitor
US2011073958A1 Asymmetric silicon-on-insulator SRAM cell
US2011049645A1 Structure with reduced fringe capacitance
US2011051482A1 Content addressable memory array programmed to perform logic operations
US2010270676A1 Adaptive interconnect structure
US2009273041A1 Transistor with high-k dielectric sidewall spacer
US2009072312A1 Metal High-K (MHK) Dual Gate Stress Engineering Using Hybrid Orientation (HOT) CMOS