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TAIWAN SEMICONDUCTOR MFG CORP

Overview
  • Total Patents
    56
About

TAIWAN SEMICONDUCTOR MFG CORP has a total of 56 patent applications. Its first patent ever was published in 1995. It filed its patents most often in United States, China and Taiwan. Its main competitors in its focus markets semiconductors, computer technology and optics are CHEN SHIH-HUNG, PARK NAM KYUN and CHENGDU ANALOG CIRCUIT TECH INC.

Patent filings in countries

World map showing TAIWAN SEMICONDUCTOR MFG CORPs patent filings in countries
# Country Total Patents
#1 United States 30
#2 China 22
#3 Taiwan 4

Patent filings per year

Chart showing TAIWAN SEMICONDUCTOR MFG CORPs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Chi Min-Hwa 12
#2 Lin Dahcheng 3
#3 Yu Zhen-Hua 2
#4 Lin Chingfu 2
#5 Lou Chine-Gie 2
#6 Wang Ling-Sung 2
#7 Zhang Xun-Ming 2
#8 Chan Bor-Wen 1
#9 Jang Chau-Rung 1
#10 Chender Huang 1

Latest patents

Publication Filing date Title
US7469057B2 System and method for inspecting errors on a wafer
US2005184340A1 Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents
US7078766B2 Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents
US6346838B1 Internal offset-canceled phase locked loop-based deskew buffer
US6396751B1 Semiconductor device comprising a test structure
US6288943B1 Method for programming and reading 2-bit p-channel ETOX-cells with non-connecting HSG islands as floating gate
US6240015B1 Method for reading 2-bit ETOX cells using gate induced drain leakage current
US6181601B1 Flash memory cell using p+/N-well diode with double poly floating gate
US6262447B1 Single polysilicon DRAM cell and array with current gain
US6215156B1 Electrostatic discharge protection device with resistive drain structure
US6255713B1 Current source using merged vertical bipolar transistor based on gate induced gate leakage current
US6133085A Method for making a DRAM capacitor using a rotated photolithography mask
US6232180B1 Split gate flash memory cell
US6133780A Digitally tunable voltage reference using a neuron MOSFET
US6133604A NOR array architecture and operation methods for ETOX cells capable of full EEPROM functions
US6281550B1 Transistor and logic circuit of thin silicon-on-insulator wafers based on gate induced drain leakage currents
US6162732A Method for reducing capacitance depletion during hemispherical grain polysilicon synthesis for DRAM
US6146968A Method for forming a crown capacitor
US6207545B1 Method for forming a T-shaped plug having increased contact area
US6144075A CMOS inverter using gate induced drain leakage current