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SHANGHAI GRACE SEMICONDUCTOR

Overview
  • Total Patents
    1,492
About

SHANGHAI GRACE SEMICONDUCTOR has a total of 1,492 patent applications. Its first patent ever was published in 2002. It filed its patents most often in China and Taiwan. Its main competitors in its focus markets semiconductors, computer technology and environmental technology are KUTSUKAKE HIROYUKI, COVA TECHNOLOGIES INC and MIKAWA TAKUMI.

Patent filings in countries

World map showing SHANGHAI GRACE SEMICONDUCTORs patent filings in countries
# Country Total Patents
#1 China 1,484
#2 Taiwan 8

Patent filings per year

Chart showing SHANGHAI GRACE SEMICONDUCTORs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Yang Guangjun 83
#2 Guangjun Yang 60
#3 Jian Hu 45
#4 Xiaoli Wu 43
#5 Weiran Kong 43
#6 He Jun 38
#7 Bo Zhang 36
#8 Xianzhou Liu 35
#9 Po Li 33
#10 Zigui Cao 30

Latest patents

Publication Filing date Title
CN103528575A Three-dimensional AMRMEMS (Anisotropic Magneto Resistive Micro-Electro-Mechanical System) three-axis magnetometer structure and magnetometer
CN103426730A Method for improving Q value of inductor which is integrated passive device
CN103456363A Control method of electrically erasable programmable read-only memory
CN103435003A Method for etching contact hole for MEMS (Micro Electro Mechanical Systems) AMR (Adaptive Multiple Rate) and method for manufacturing contact hole for MEMS AMR
CN103420328A AMR (Anisotropic Magneto-resistance) MEMS manufacturing method
CN103441061A Capacitor structure and manufacturing method thereof
CN103474442A COMS (complementary metal-oxide semiconductor) image sensor and manufacturing method thereof
CN103606561A Power mos tube and manufacturing method thereof
CN103413756A Split gate resistor structure and manufacturing method thereof
CN103441131A Partially-depleted silicon-on-insulator device structure
CN103426729A Method for improving Q value of inductor which is integrated passive device
CN103456362A Erasing method of reference unit
CN103456358A Memory array
CN103434998A Test structure and test method of wafer level airtightness
CN103426728A Capacitor structure and manufacturing method thereof
CN103454052A Measuring method of MEMS component and wafer level sealing performance
CN103441073A Low-power-consumption MOS device grid electrode etching method and low-power-consumption MOS device manufacturing method
CN103441149A Groove power device and manufacturing method thereof
CN103439535A Method for clamping measuring instrument
CN103426932A Double resurf ldmos device