Learn more

SANEN KODEN KOFUN YUGENKOSHI

Overview
  • Total Patents
    30
About

SANEN KODEN KOFUN YUGENKOSHI has a total of 30 patent applications. Its first patent ever was published in 2000. It filed its patents most often in Japan. Its main competitors in its focus markets semiconductors are SUMITOMO BAKELITE SINGAPORE PT, HITACHI CABLE FILM DEVICE LTD and WAIDA MFG.

Patent filings in countries

World map showing SANEN KODEN KOFUN YUGENKOSHIs patent filings in countries
# Country Total Patents
#1 Japan 30

Patent filings per year

Chart showing SANEN KODEN KOFUN YUGENKOSHIs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Kan Honin 29
#2 Wu Liang-Wen 15
#3 Wen Tzu-Chi 14
#4 Yu Cheng-Tsang 14
#5 Tu Ru-Chin 13
#6 Chin Ryuken 12
#7 Ran Bunko 5
#8 Han Shakumei 3
#9 Yang Kuang-Neng 3
#10 Tsai Ya-Ping 2

Latest patents

Publication Filing date Title
JP2006135010A Semiconductor photodetector
JP2006120764A Gallium nitride system light-emitting diode equipped with high reverse reactive voltage and high static electricity preventing function
JP2006114537A High luminance gallium nitride based light emitting diode
JP2006114564A Gallium nitride based ultraviolet photodetector
JP2006114548A Buffer layer structure of gallium nitride based diode device
JP2006108471A Light emitting semiconductor connection structure and method thereof
JP2006108487A Gallium nitride light-emitting diode
JP2006108297A Structure of low electrical resistance n-type contact layer of gallium nitride light-emitting diode
JP2006096620A Method of producing nitride epitaxial layer, and its structure
JP2006093624A Gallium nitride-based light emitting diode
JP2006093584A Nitride-epitaxial-layer structure, and manufacturing method of this structure
JP2006086164A Structure of light emitting diode
JP2006086165A Structure of gallium nitride-based light emitting diode provided with p-type contact layer with low-temperature growth and low electric resistance
JP2006086167A Structure of light emitting layer in gallium nitride-based light emitting diode
JP2006066778A Gallium nitride-based light emitting diode
JP2005191099A Light-emitting diode device
JP2005191110A Nitride light emitting device and high luminous power conversion efficiency nitride light emitting device
JP2005072089A Light emitting diode device and its manufacturing method
JP2005072096A Light emitting diode device and its manufacturing method
JP2005072094A Light emitting diode device where selective growth is applied