|
US2013021846A1
|
|
Lifetime mixed level non-volatile memory system
|
|
US2012226934A1
|
|
Mission critical nand flash
|
|
US2010006138A1
|
|
Semiconductor devices with graded dopant regions
|
|
US2009109787A1
|
|
Nonvolatile memory systems with embedded fast read and write memories
|
|
US2009244970A1
|
|
Random access memory with CMOS-compatible nonvolatile storage element and parallel storage capacitor
|
|
US2009182938A1
|
|
Content addressable memory augmented memory
|
|
US2009122627A1
|
|
Memory with programmable address strides for accessing and precharging during the same access cycle
|
|
US2009106508A1
|
|
Digital memory with controllable input/output terminals
|
|
US2009106505A1
|
|
Digital memory with fine grain write operation
|
|
US2009103386A1
|
|
Selectively-powered memories
|
|
US2009097308A1
|
|
Multivalue memory storage with two gating transistors
|
|
US2008123450A1
|
|
Memories with front end precharge
|
|
US2008123451A1
|
|
Memories with selective precharge
|
|
US2006049464A1
|
|
Semiconductor devices with graded dopant regions
|
|
US2008288785A1
|
|
Data security and digital rights management system
|
|
US2005066133A1
|
|
Memories for electronic systems
|
