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HARARI ELIYAHOU

Overview
  • Total Patents
    53
About

HARARI ELIYAHOU has a total of 53 patent applications. Its first patent ever was published in 1980. It filed its patents most often in United States, Japan and Germany. Its main competitors in its focus markets computer technology, semiconductors and machines are ADESTO TECH CORP, POLARIS INNOVATIONS LTD and FUTATSUYAMA TAKUYA.

Patent filings per year

Chart showing HARARI ELIYAHOUs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Harari Eliyahou 40
#2 Eriyaho Harari 7
#3 Guterman Daniel C 4
#4 Wallace Robert F 4
#5 Selinger Robert D 3
#6 Heye Richard R 3
#7 Harari Eliyahou Dr 3
#8 Lasser Menahem 2
#9 Mehrotra Sanjay 2
#10 Eriyafuu Harari 1

Latest patents

Publication Filing date Title
US2011041039A1 Controller and Method for Interfacing Between a Host Controller in a Host and a Flash Memory Device
US2010023800A1 NAND flash memory controller exporting a NAND interface
JP2002319290A FLASH EEprom MEMORY SYSTEM AND UTILIZATION METHOD THEREFOR
JP2000067589A FLASH EEprom MEMORY SYSTEM AND ITS USING METHOD
US5293560A Multi-state flash EEPROM system using incremental programing and erasing methods
US5268319A Highly compact EPROM and flash EEPROM devices
US5268318A Highly compact EPROM and flash EEPROM devices
US5168465A Highly compact EPROM and flash EEPROM devices
US5268870A Flash EEPROM system and intelligent programming and erasing methods therefor
US5136533A Sidewall capacitor DRAM cell
US5043940A Flash EEPROM memory systems having multistate storage cells
US4958318A Sidewall capacitor DRAM cell
US5095344A Highly compact eprom and flash eeprom devices
US4933739A Trench resistor structures for compact semiconductor memory and logic devices
JPS6095964A Dynamic ram cell highly extensible or contractible with self signal amplification
JPS58154260A Highly expandable and contractible dynamic ram cell with self signal amplification
US4448400A Highly scalable dynamic RAM cell with self-signal amplification
US4417325A Highly scaleable dynamic ram cell with self-signal amplification
US4449224A Dynamic merged load logic (MLL) and merged load memory (MLM)
US4409723A Method of forming non-volatile EPROM and EEPROM with increased efficiency