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RAMTRON INT CORP

Overview
  • Total Patents
    220
About

RAMTRON INT CORP has a total of 220 patent applications. Its first patent ever was published in 1987. It filed its patents most often in United States, EPO (European Patent Office) and Japan. Its main competitors in its focus markets computer technology, semiconductors and machines are MICRON TECHNOLOGY INC, HANGZHOU HAICUN INFORMATION TECH CO LTD and MACRONIX INT CO LTD.

Patent filings in countries

World map showing RAMTRON INT CORPs patent filings in countries
# Country Total Patents
#1 United States 132
#2 EPO (European Patent Office) 53
#3 Japan 19
#4 China 14
#5 Germany 2

Patent filings per year

Chart showing RAMTRON INT CORPs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Wilson Dennis R 22
#2 Kraus William F 21
#3 Sun Shan 13
#4 Verhaeghe Donald J 10
#5 Lehman Lark E 10
#6 Taylor Craig 10
#7 Evans Thomas A 9
#8 Allen Judith E 9
#9 Argos Jr George 9
#10 Traynor Steven D 8

Latest patents

Publication Filing date Title
US2014146591A1 Method for improving data retention in a 2T/2C ferroelectric memory
CN102956566A Method for fabricating a damascene self-aligned ferroelectric random access memory (f-ram) device structure employing reduced processing steps
CN102956565A Method for fabricating a damascene self-aligned ferroelectric random access memory (f-ram) with simultaneous formation of sidewall ferroelectric capacitors
CN102956463A Method for fabricating a damascene self-aligned ferroelectric random access memory (f-ram) having a ferroelectric capacitor aligned with a three dimensional transistor structure
CN102842061A Power-on sequencing for RFID tag
CN102841775A Stack processor using ferroelectric random access memory and having optimized instruction set
CN102841774A Stack processor using a ferroelectric random access memory (f-ram) for code space and a portion of the stack memory space
CN102841867A Stack processor using a ferroelectric random access memory for both code and data space
CN102880446A Stack processor using a ferroelectric random access memory (f-ram) for code space and a portion of the stack memory space having an instruction set optimized to minimize processor stack accesses
CN102693190A Authenticating ferroelectric random access memory (f-ram) device and method
CN102314581A Use the RFID access method of indirect memory pointer
CN102314401A Be used for the low-power of RFID transponder, few pin-count interface
CN102314618A Be used for the interruption generating of RFID and the apparatus and method of affirmation
CN102393916A Fast block write using an indirect memory pointer
US2009108887A1 Fast power-on detect circuit with accurate trip-points
US2009103348A1 2T/2C ferroelectric random access memory with complementary bit-line loads
US2006140332A1 Counting scheme with automatic point-of-reference generation
US2006140331A1 Non-volatile counter
US2006098470A1 Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memory
EP1533905A2 Imprint-free coding for ferroelectric nonvolatile counters