RAMASWAMY NIRMAL has a total of 13 patent applications. Its first patent ever was published in 2004. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, measurement and surface technology and coating are SAN AN OPTOELECTRONICS CO LTD, HC SEMITEK SUZHOU CO LTD and HC SEMITEK ZHEJIANG CO LTD.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 13 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Measurement | |
#3 | Surface technology and coating | |
#4 | Micro-structure and nano-technology | |
#5 | Computer technology | |
#6 | Machines |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Coating metallic material | |
#3 | Measuring light | |
#4 | Nanostructure applications | |
#5 | Unspecified technologies | |
#6 | Static stores |
# | Name | Total Patents |
---|---|---|
#1 | Ramaswamy Nirmal | 13 |
#2 | Blomiley Eric R | 4 |
#3 | Sandhu Gurtej S | 4 |
#4 | Sandhu Gurtej | 2 |
#5 | Drewes Joel A | 2 |
#6 | Graettinger Thomas M | 1 |
#7 | Carlson Chris M | 1 |
#8 | Basceri Cem | 1 |
#9 | Min Kyu | 1 |
#10 | Gealy F Daniel | 1 |
Publication | Filing date | Title |
---|---|---|
US2012104343A1 | Nonvolatile memory cells and methods of forming nonvolatile memory cell | |
US2012007037A1 | Cross-point memory utilizing Ru/Si diode | |
US2011180865A1 | Charge storage nodes with conductive nanodots | |
US2011049606A1 | Charge-trap based memory | |
US2009321809A1 | Graded oxy-nitride tunnel barrier | |
US2009008702A1 | Dielectric charge-trapping materials having doped metal sites | |
US2006255412A1 | Enhanced access devices using selective epitaxial silicon over the channel region during the formation of a semiconductor device and systems including same | |
US2006046440A1 | Methods of forming layers comprising epitaxial silicon | |
US2005217569A1 | Methods of depositing an elemental silicon-comprising material over a semiconductor substrate and methods of cleaning an internal wall of a chamber |