US2019081016A1
|
|
High-voltage MOSFET structures
|
US2019081147A1
|
|
Mosfet with vertical variation of gate-pillar separation
|
US2017263580A1
|
|
High voltage tolerant bonding pad structure for trench-based semiconductor devices
|
US2017263759A1
|
|
LDMOS transistor with lightly-doped annular RESURF periphery
|
US2017263765A1
|
|
Drift-region field control of an LDMOS transistor using biased shallow-trench field plates
|
US2017263718A1
|
|
Termination trench structures for high-voltage split-gate MOS devices
|
US2016247879A1
|
|
Trench semiconductor device layout configurations
|
US2017236934A1
|
|
Floating-shield triple-gate MOSFET
|
US2017194485A1
|
|
Split-gate superjunction power transistor
|
US2017033022A1
|
|
Method of controlling etch-pattern density and device made using such method
|
US2016380086A1
|
|
Device parameter normalization about a periphery of a non-circular emitter of a lateral bipolar transistor
|