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MAXPOWER SEMICONDUCTOR INC

Overview
  • Total Patents
    125
  • GoodIP Patent Rank
    19,743
  • Filing trend
    ⇩ 18.0%
About

MAXPOWER SEMICONDUCTOR INC has a total of 125 patent applications. It decreased the IP activity by 18.0%. Its first patent ever was published in 2007. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and China. Its main competitors in its focus markets semiconductors and basic communication technologies are SU ZHOU ORIENTAL SEMICONDUCTOR CO LTD, SUZHOU KEYI SKY SEMICONDUCTOR TECHNOLOGIES INC and OPCELL CO LTD.

Patent filings per year

Chart showing MAXPOWER SEMICONDUCTOR INCs patent filings per year from 1900 to 2020

Focus technologies

Top inventors

# Name Total Patents
#1 Darwish Mohamed N 98
#2 Zeng Jun 83
#3 Blanchard Richard A 38
#4 Su Shih-Tzung 18
#5 Yilmaz Hamza 14
#6 Pu Kui 13
#7 Darwish Mohamed 10
#8 Paul Amit 9
#9 Mohamed N Darwish 4
#10 Du Wenfang 2

Latest patents

Publication Filing date Title
WO2021030490A1 High density power device with selectively shielded recessed field plate
US2020273987A1 Split gate power device and its method of fabrication
US2019122926A1 Self-Aligned Shielded Trench MOSFETs and Related Fabrication Methods
WO2018237355A1 Vertical rectifier with added intermediate region
WO2018231866A1 Trench-gated heterostructure and double-heterojunction active devices
US2018366569A1 Trench-Gated Heterostructure and Double-Heterostructure Active Devices
US2018261666A1 Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands
TW201929058A Fabrication of trench-gated wide-bandgap devices
WO2018034818A1 Power mosfet having planar channel, vertical current path, and top drain electrode
US2018358449A1 Fabrication of Trench-Gated Wide-Bandgap Devices
CN107851662A The manufacture of the wide energy gap device of plough groove type gate
TW201903956A Power element with polycrystalline silicon filled trenches with tapered oxide thickness doping nitrogen into the trench walls to form tapered oxide
TWI607563B Vertical power transistor having dopants implanted in trench of terminal ring and block area and thin bottom layer emitter having a periodically highly doped p-type emitter splice in a top surface region of a growth substrate
WO2017100678A1 Lateral semiconductor power devices
US2017110535A1 Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination rings
US2017069727A1 Power device having a polysilicon-filled trench with a tapered oxide thickness
US2016359029A1 Power MOSFET having planar channel, vertical current path, and top drain electrode
US2017077221A1 Lateral power MOSFET with non-horizontal RESURF structure
WO2016112047A1 Reverse-conducting gated-base bipolar-conduction devices and methods with reduced risk of warping
US2015221731A1 Vertical power MOSFET having planar channel and its method of fabrication