|
US2012261746A1
|
|
Double-Trench Vertical Devices and Methods with Self-Alignment Between Gate and Body Contact
|
|
US8704295B1
|
|
Schottky and MOSFET+Schottky structures, devices, and methods
|
|
WO2012006261A2
|
|
Power semiconductor devices, structures, and related methods
|
|
US2011254088A1
|
|
Power MOSFET with embedded recessed field plate and methods of fabrication
|
|
US2011169103A1
|
|
Devices, components and methods combining trench field plates with immobile electrostatic charge
|
|
US8564057B1
|
|
Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
|
|
US2011006361A1
|
|
Integrated power supplies and combined high-side plus low-side switches
|
|
US2010025726A1
|
|
Lateral devices containing permanent charge
|
|
WO2009154882A2
|
|
Semiconductor power switches having trench gates
|
|
WO2009102651A2
|
|
Edge termination with improved breakdown voltage
|
|
US2008296636A1
|
|
Devices and integrated circuits including lateral floating capacitively coupled structures
|
|
US2008166845A1
|
|
Method of manufacture for a semiconductor device
|
|
US2007262398A1
|
|
High voltage semiconductor device with lateral series capacitive structure
|
