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NIPPON MINING CO

Overview
  • Total Patents
    5,410
About

NIPPON MINING CO has a total of 5,410 patent applications. Its first patent ever was published in 1933. It filed its patents most often in Japan, United States and China. Its main competitors in its focus markets materials and metallurgy, surface technology and coating and environmental technology are NIKKO MATERIALS CO LTD, DOWA MINING CO and MITSUBISHI MATERIALS CORP.

Patent filings per year

Chart showing NIPPON MINING COs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Tsuji Masahiro 286
#2 Fukamachi Kazuhiko 177
#3 Kawauchi Susumu 155
#4 Yuki Norio 141
#5 Kamio Morinori 108
#6 Shindo Yuichiro 107
#7 Imori Toru 105
#8 Tominaga Tsutomu 101
#9 Yahagi Masataka 93
#10 Oda Osamu 91

Latest patents

Publication Filing date Title
CN102694218A Solvent extraction method of aluminum
JP2012021222A Fire reduction method of iridium
JP2012017513A Method of leaching copper
CN102481759A Copper foil composite
JP2010229551A ZnS POWDER FOR SPUTTERING TARGET AND SPUTTERING TARGET
JP2010168666A HEAT-RESISTANT TINNED STRIP OF Cu-Zn ALLOY IN WHICH WHISKER IS SUPPRESSED
CN102365385A Ti-Nb oxide sintered body sputtering target, Ti-Nb oxide thin film, and method for producing the thin film
WO2010113715A1 Method of producing semiconductor device, and semiconductor device
JP2010150138A CdTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL FOR ELECTRIC OPTICAL ELEMENT
TW201037105A Double layered flexible board, and copper electrolytic liquid for making the same
WO2010110062A1 Flexible substrate and process for production thereof
WO2010110033A1 Ferromagnetic-material sputtering target of nonmagnetic-material particle dispersion type
JP2010159496A Tantalum sputtering target and method for production thereof
JP2010150136A Apparatus for producing compound semiconductor single crystal and method for production thereof
CN102341941A Positive electrode active material for lithium ion battery
JP2010143823A MoSi2 POWDER, METHOD FOR PRODUCING THE SAME, HEATING ELEMENT USING THE POWDER, AND METHOD FOR PRODUCING THE HEATING ELEMENT
JP2010100524A Method for producing scorodite and method for washing the same
JP2010116320A Method of manufacturing iron silicide sputtering target and iron silicide sputtering target
JP2010116628A Sputtering target, and optical information recording medium and production method therefor
JP2010156049A High purity vanadium, target composed of the same vanadium, the same vanadium thin film, method of producing the same vanadium and method of producing the same vanadium spattering target