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NIKKO MATERIALS CO LTD

Overview
  • Total Patents
    917
  • GoodIP Patent Rank
    225,112
  • Filing trend
    ⇩ 100.0%
About

NIKKO MATERIALS CO LTD has a total of 917 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 1998. It filed its patents most often in Japan, WIPO (World Intellectual Property Organization) and Taiwan. Its main competitors in its focus markets surface technology and coating, audio-visual technology and materials and metallurgy are NIPPON MINING CO, CHENMING MOLD IND CORP and DOWA MINING CO.

Patent filings per year

Chart showing NIKKO MATERIALS CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Kumagai Masashi 87
#2 Shindo Yuichiro 82
#3 Yahagi Masataka 75
#4 Takami Hideo 69
#5 Miyashita Hirohito 65
#6 Imori Toru 61
#7 Tsuchida Katsuyuki 56
#8 Sato Kenji 39
#9 Okabe Takeo 31
#10 Ouchi Takashi 30

Latest patents

Publication Filing date Title
TW201707536A Laminated device
JP2006138021A Sputtering target for forming optical disk protective film
WO2006051736A1 Hydrogen separation membrane, sputtering target for forming of hydrogen separation membrane, and process for producing the same
WO2006038406A1 HIGH PURITY ZrB2 POWDER AND METHOD FOR PRODUCTION THEREOF
WO2006051637A1 Electroless gold plating solution
WO2006025187A1 Metal powder for powder metallurgy mainly containing iron and iron-base sintered material
JP2005298978A Powder for sintering sputtering target, and sputtering target
CN1842616A Chemical gold plating liquid
JP2005220444A High purity metal, sputtering target composed of high purity metal, thin film deposited by sputtering, and method for producing high purity metal
WO2005098088A1 Electroless gold plating liquid
WO2005112106A1 Wafer storage container
CN102424965A Metal surface treating agent
JP2005171389A Method for manufacturing tungsten target for sputtering
WO2005106083A1 InP SINGLE CRYSTAL WAFER AND InP SINGLE CRYSTAL MANUFACTURING METHOD
WO2005093124A1 Co-Cr-Pt-B BASED ALLOY SPUTTERING TARGET
CN1926260A Sputtering target with few surface defects and method for processing surface thereof
WO2005083136A1 HIGH-PURITY Ru POWDER, SPUTTERING TARGET OBTAINED BY SINTERING THE SAME, THIN FILM OBTAINED BY SPUTTERING THE TARGET AND PROCESS FOR PRODUCING HIGH-PURITY Ru POWDER
CN1914359A Sealing agent, method of sealing and printed circuit board treated with the sealing agent
WO2005073434A1 Ultrahigh-purity copper and process for producing the same
JP2006147325A Low resistivity transparent conductor