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NEWPORT FAB LLC

Overview
  • Total Patents
    248
  • GoodIP Patent Rank
    14,006
  • Filing trend
    ⇧ 100.0%
About

NEWPORT FAB LLC has a total of 248 patent applications. It increased the IP activity by 100.0%. Its first patent ever was published in 1998. It filed its patents most often in United States and Taiwan. Its main competitors in its focus markets semiconductors, basic communication technologies and micro-structure and nano-technology are ATOMERA INC, UNISANTIS ELECT SINGAPORE PTE and SEMICONDUCTOR MFG INT (SHANGHAI) CO LTD.

Patent filings in countries

World map showing NEWPORT FAB LLCs patent filings in countries
# Country Total Patents
#1 United States 235
#2 Taiwan 13

Patent filings per year

Chart showing NEWPORT FAB LLCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Howard David J 78
#2 Racanelli Marco 49
#3 El-Hinnawy Nabil 46
#4 Slovin Gregory P 46
#5 Rose Jefferson E 40
#6 Hurwitz Paul D 31
#7 Schuegraf Klaus F 30
#8 Debar Michael J 24
#9 Yin Kevin Q 21
#10 Kalburge Amol 20

Latest patents

Publication Filing date Title
US2020091429A1 High reliability phase-change material (PCM) radio frequency (RF) switch using trap-rich region
US2020091428A1 Phase-change material (PCM) radio frequency (RF) switch
US2020058868A1 Read out integrated circuit (ROIC) for rapid testing and characterization of resistivity change of heating element in phase-change material (PCM) radio frequency (RF) switch
US2020057013A1 Read out integrated circuit (ROIC) for rapid testing and characterization of conductivity skew of phase-change material (PCM) in PCM radio frequency (RF) switches
US2020059229A1 Read out integrated circuit (ROIC) for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
US10686486B1 Radio frequency (RF) switch with improved power handling
US10536124B1 Power amplifier module using phase-change material (PCM) radio frequency (RF) switches and selectable matching networks
US2020058865A1 Semiconductor chips and systems having phase-change material (PCM) switches integrated with micro-electrical-mechanical systems (MEMS) and/or resonators
US10649137B1 Silicon-on-insulator (SOI) die including a light emitting layer pedestal-aligned with a light receiving segment
US2020058703A1 Fabrication of semiconductor device using a shared material in a phase-change material (PCM) switch region and a resonator region
US2020058354A1 Array architecture for large scale integration of phase-change material (PCM) radio frequency (RF) switches
US2020058852A1 Semiconductor devices having phase-change material (PCM) radio frequency (RF) switches and integrated active devices
US2020058851A1 Semiconductor devices having phase-change material (PCM) radio frequency (RF) switches and integrated passive devices
US10529922B1 Substrates and heat spreaders for heat management and RF isolation in integrated semiconductor devices having phase-change material (PCM) radio frequency (RF) switches
US2020058861A1 Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch
US2020259036A1 Germanium photodiode with silicon cap
US10454027B1 Phase-change material (PCM) radio frequency (RF) switches with stressor layers and contact adhesion layers
US2020058582A1 Capacitive tuning circuit using RF switches with PCM capacitors and PCM contact capacitors
US2020058581A1 Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled RF terminals
US2020058850A1 Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches