CN107958930A
|
|
One kind nitridation Gallium radical heterojunction field effect transistor structures
|
CN107958931A
|
|
One kind nitridation Gallium base heterojunctions field-effect transistor structure of resistance to breakdown
|
CN107958939A
|
|
One kind nitridation Gallium base heterojunction Schottky diode structures
|
CN107958925A
|
|
One kind nitridation Gallium base heterojunctions Schottky diode structure of resistance to breakdown
|
CN107958940A
|
|
A kind of N-type carborundum Schottky diode structure of resistance to breakdown
|
CN107623024A
|
|
The structure and manufacture method that a kind of metal contacts with wide band gap semiconducter
|
CN107622941A
|
|
A kind of doping method of wide bandgap semiconductor
|
CN106941116A
|
|
One kind nitridation Gallium base heterojunction semiconductor device structures
|
CN106611777A
|
|
Terminal structure of silicon carbide semiconductor device
|
CN106611798A
|
|
N type silicon carbide semiconductor Schottky diode structure
|
CN106611776A
|
|
N-type silicon carbide Schottky diode structure
|
CN106571385A
|
|
Metal silicon carbide touch structure
|
CN106571300A
|
|
Manufacturing technology of gate dielectric layer of silicon carbide semiconductor device
|
CN106469647A
|
|
A kind of doping manufacturing process of sic semiconductor device
|
CN106469646A
|
|
A kind of silicon carbide device forms highly doped manufacture method with ion implanting
|
CN105990406A
|
|
Back structure of power device manufactured on epitaxial silicon wafer
|
CN105489636A
|
|
Back surface structure of semiconductor power device
|