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NANJING LISHENG SEMICONDUCTOR TECH CO LTD

Overview
  • Total Patents
    17
  • GoodIP Patent Rank
    100,279
About

NANJING LISHENG SEMICONDUCTOR TECH CO LTD has a total of 17 patent applications. Its first patent ever was published in 2014. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are LAVOIE CHRISTIAN, SHANGHAI JINGYI ELECTRONIC TECH CO LTD and HATSUCHIYANDOU KK.

Patent filings in countries

World map showing NANJING LISHENG SEMICONDUCTOR TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 17

Patent filings per year

Chart showing NANJING LISHENG SEMICONDUCTOR TECH CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Huang Shenghui 15
#2 Su Guanchuang 11

Latest patents

Publication Filing date Title
CN107958930A One kind nitridation Gallium radical heterojunction field effect transistor structures
CN107958931A One kind nitridation Gallium base heterojunctions field-effect transistor structure of resistance to breakdown
CN107958939A One kind nitridation Gallium base heterojunction Schottky diode structures
CN107958925A One kind nitridation Gallium base heterojunctions Schottky diode structure of resistance to breakdown
CN107958940A A kind of N-type carborundum Schottky diode structure of resistance to breakdown
CN107623024A The structure and manufacture method that a kind of metal contacts with wide band gap semiconducter
CN107622941A A kind of doping method of wide bandgap semiconductor
CN106941116A One kind nitridation Gallium base heterojunction semiconductor device structures
CN106611777A Terminal structure of silicon carbide semiconductor device
CN106611798A N type silicon carbide semiconductor Schottky diode structure
CN106611776A N-type silicon carbide Schottky diode structure
CN106571385A Metal silicon carbide touch structure
CN106571300A Manufacturing technology of gate dielectric layer of silicon carbide semiconductor device
CN106469647A A kind of doping manufacturing process of sic semiconductor device
CN106469646A A kind of silicon carbide device forms highly doped manufacture method with ion implanting
CN105990406A Back structure of power device manufactured on epitaxial silicon wafer
CN105489636A Back surface structure of semiconductor power device