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BEIJING YANDONG MICROELECTRONIC CO LTD

Overview
  • Total Patents
    39
  • GoodIP Patent Rank
    43,997
  • Filing trend
    ⇩ 71.0%
About

BEIJING YANDONG MICROELECTRONIC CO LTD has a total of 39 patent applications. It decreased the IP activity by 71.0%. Its first patent ever was published in 2012. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are NANYA TECHNOLOGY INC, KIM JU-YOUN and MONOLITH SEMICONDUCTOR INC.

Patent filings in countries

World map showing BEIJING YANDONG MICROELECTRONIC CO LTDs patent filings in countries
# Country Total Patents
#1 China 39

Patent filings per year

Chart showing BEIJING YANDONG MICROELECTRONIC CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Zhou Yuan 21
#2 Zhang Xinwei 12
#3 Li Mingyu 11
#4 Guo Yanhua 11
#5 Lin Zengjin 11
#6 Zhu Jihong 10
#7 Zhang Zhiwen 9
#8 Zhao Xiaorui 7
#9 Wei Shigong 5
#10 Huai Yongjin 5

Latest patents

Publication Filing date Title
CN110808240A Package-on-package structure and method for manufacturing the same
CN110246764A A kind of chip package process and chip-packaging structure
CN109904135A A kind of encapsulating structure of silicon carbide device
CN109817705A A method of reducing groove silicon carbide MOSFET interfacial state
CN109904217A It is a kind of for the field limiting ring terminal structure of silicon carbide device, its production method and silicon carbide device
CN109148274A A kind of ion injection method for SiC device
CN108198811A Transient Voltage Suppressor and its manufacturing method
CN108198813A Transient Voltage Suppressor and its manufacturing method
CN108198812A Transient Voltage Suppressor and its manufacturing method
CN108198810A Transient Voltage Suppressor and its manufacturing method
CN108231566A A kind of forming method of SiC device Ohmic contact
CN108063087A A kind of controllable SiC substrate gentle slope lithographic method of angle
CN107910379A A kind of SiC junction barrel Schottky diode and preparation method thereof
CN107946353A A kind of SiC Schottky diode and preparation method thereof
CN107968126A A kind of SiC Schottky diode and preparation method thereof
CN107706229A Transient Voltage Suppressor and its manufacture method
CN107527907A Transient Voltage Suppressor and its manufacture method
CN107611011A A kind of bilayer mask technique of inhibition of self-doped
CN107301997A Transient Voltage Suppressor and its manufacture method
CN107301996A Transient Voltage Suppressor and its manufacture method