CN112289752A
|
|
Flip GaN power device packaging structure and preparation method thereof
|
CN111430464A
|
|
Split gate MOSFET device with reduced switching losses and method of making same
|
CN111312823A
|
|
Ultra-low on-resistance split gate MOSFET device and manufacturing method thereof
|
CN110233111A
|
|
The production technology of interior insulation plastic device
|
CN110061052A
|
|
High forward blocking voltage gate sensitive triggering unidirectional controlled silicon chip and manufacturing method
|
CN110098254A
|
|
Utilize the single table surface high-voltage thyristor chip and manufacturing method of the two-way scribing of symmetry
|
CN110071171A
|
|
A kind of controlled silicon chip and preparation method thereof with over-voltage copped wave characteristic
|
CN109346512A
|
|
A kind of terminal structure and its manufacturing method of semiconductor devices
|
CN109003957A
|
|
The preparation method of SOT-89/223-2L lead frame and two leg structures
|
CN109449125A
|
|
A kind of two-row structure internal insulation type plastic semiconductor element and its manufacturing method
|
CN108767004A
|
|
A kind of separation grid MOSFET component structure and its manufacturing method
|
CN108493258A
|
|
A kind of the Trench schottky devices and manufacturing method of ultralow forward voltage drop
|
CN108598151A
|
|
The semiconductor devices terminal structure and its manufacturing method of voltage endurance capability can be improved
|
CN108649072A
|
|
A kind of groove MOSFET device and its manufacturing method of low on-resistance
|
CN108461547A
|
|
A kind of MOS type super barrier rectifier and its manufacturing method
|
CN108231913A
|
|
The structure and its manufacturing method of a kind of trench schottky diode
|
CN108074809A
|
|
A kind of manufacturing method of quick soft-recovery diode chip
|
CN107785276A
|
|
A kind of manufacture method for improving two-piece type framework encapsulation positioning precision
|
CN107154389A
|
|
The minitype paster solid-state relay and its manufacture method of a kind of high heat-sinking capability
|
CN105720110A
|
|
SiC annular floating-point type P+ structured junction barrier Schottky diode and preparation method thereof
|