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NANJING GUOSHENG ELECTRONIC CO LTD

Overview
  • Total Patents
    24
  • GoodIP Patent Rank
    84,874
  • Filing trend
    ⇧ 100.0%
About

NANJING GUOSHENG ELECTRONIC CO LTD has a total of 24 patent applications. It increased the IP activity by 100.0%. Its first patent ever was published in 2008. It filed its patents most often in China and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, surface technology and coating and environmental technology are UBILUX OPTOELECTRONICS CORP, AZZURRO SEMICONDUCTORS AG and DARGIS RYTIS.

Patent filings in countries

World map showing NANJING GUOSHENG ELECTRONIC CO LTDs patent filings in countries

Patent filings per year

Chart showing NANJING GUOSHENG ELECTRONIC CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Jin Long 12
#2 Tan Weidong 6
#3 Liu Yong 5
#4 Luo Hong 5
#5 Wang Yinhai 3
#6 Deng Xuehua 3
#7 Yang Fan 3
#8 Ma Linbao 3
#9 You Xiaojie 3
#10 Han Xu 2

Latest patents

Publication Filing date Title
CN112002660A Semiconductor processing device, processing method and application
CN111524837A Device and method for monitoring running state of heating system of silicon epitaxial equipment
CN111384212A Manufacturing method of silicon epitaxial wafer of back-illuminated BIB infrared detector
CN111199882A Wafer epitaxial manufacturing method with SOI as substrate
CN110660649A Manufacturing method of silicon epitaxial wafer for 8-inch VDMOS power tube
CN110783217A Method and system for detecting wafer epitaxial parameter abnormity
CN108417483A A kind of preparation method of 8 inches of high-power IGBTs component epitaxial wafer
CN108447772A A kind of manufacturing method of COOLMOS silicon epitaxial wafers
CN108428630A A kind of preparation method of 200mm Schottky tubes p-doped silicon epitaxial wafer
CN108767053A A kind of manufacturing method of novel infrared detector BIB silicon epitaxial wafers
CN106948002A The two-sided base construction of electromagnetic induction heating epitaxial furnace
CN106757324A A kind of manufacture method of silicon epitaxial wafer
CN106783545A A kind of adjusting method of flat board epitaxial furnace thermal field
CN106653570A Heavily doped substrate inverted high resistance IC epitaxial wafer preparation method
CN105350014A Automatic hydrogen supply integrated control system
CN105439067A Trichlorosilane supply device suitable for 8-inch silicon epitaxy process system
CN105355542A Bipolar transistor epitaxial wafer manufacturing method adopting varied temperature and varied doping flow
CN104409345A Manufacturing method of silicon epitaxial wafer of large-power PIN device
CN104103499A Production method of silicon epitaxial wafer for 8' schottky diode
CN102332497A Manufacturing method of silicon epitaxial wafer for MMW (millimeter wave) avalanche diode