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KWANSEI GAKUIN

Overview
  • Total Patents
    48
About

KWANSEI GAKUIN has a total of 48 patent applications. Its first patent ever was published in 2003. It filed its patents most often in Japan. Its main competitors in its focus markets semiconductors, environmental technology and surface technology and coating are NANJING GUOSHENG ELECTRONIC CO LTD, PAWDEC KK and CSSOLUTION CO LTD.

Patent filings in countries

World map showing KWANSEI GAKUINs patent filings in countries
# Country Total Patents
#1 Japan 48

Patent filings per year

Chart showing KWANSEI GAKUINs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Kaneko Tadaaki 29
#2 Sano Naokatsu 7
#3 Matsuda Kazuhiro 4
#4 Katsumura Shigeo 4
#5 Asaoka Yasushi 4
#6 Ushio Masashi 3
#7 Otani Noboru 3
#8 Matsuda Yusuke 3
#9 Yamamoto Takatoshi 3
#10 Sunada Hidenori 3

Latest patents

Publication Filing date Title
JP2013155111A SiC SUBSTRATE, CARBON SUPPLY FEED SUBSTRATE, AND SiC SUBSTRATE WITH CARBON NANOMATERIAL
JP2013126412A Dna demethylation induction method and application thereof
JP2013033995A Three-dimensionally microfabricated substrate
JP2012224546A Single crystal silicon carbide substrate
JP2013244156A Wheelchair controlled by determination on rowing motion
JP2013205077A Sample holding device, and sample analysis method
JP2013187420A Semiconductor device, method for forming ohmic electrode, and method for manufacturing semiconductor device
JP2013166740A 2,4-o-bridged pyranose inversion compound
JP2013043822A Method for producing semiconductor wafer, and semiconductor wafer
JP2011153074A Single crystal silicon carbide substrate
JP2012209415A Method of manufacturing semiconductor device
JP2011195574A Hif inhibitor containing bisphenol a derivative
JP2011219453A Peptide having biosilica forming ability
JP2012028446A HEAT TREATMENT APPARATUS FOR SiC SEMICONDUCTOR WAFER
JP2011164162A Support device for giving expression to performance
JP2011119412A Method of manufacturing semiconductor wafer
JP2009299901A Screw
JP2011037740A Glucose compound, method for producing the same and method for producing davidiin
JP2010268762A Method for producing bio-silica
JP2010265126A SINGLE CRYSTAL SiC SUBSTRATE, SINGLE CRYSTAL SiC SUBSTRATE WITH EPITAXIAL GROWTH LAYER, SiC SUBSTRATE, CARBON SUPPLY FEED SUBSTRATE, AND SiC SUBSTRATE WITH CARBON NANOMATERIAL