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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECH

Overview
  • Total Patents
    63
  • GoodIP Patent Rank
    23,495
  • Filing trend
    ⇧ 27.0%
About

JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECH has a total of 63 patent applications. It increased the IP activity by 27.0%. Its first patent ever was published in 2014. It filed its patents most often in United States, EPO (European Patent Office) and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, organic fine chemistry and materials and metallurgy are NAKAYAMA KATSUYOSHI, SUMITOMO METAL ELECTRONICS DEV and MORI KENTARO.

Patent filings per year

Chart showing JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Shimoda Tatsuya 41
#2 Inoue Satoshi 33
#3 Nishioka Kiyoshi 25
#4 Fukada Kazuhiro 17
#5 Fujimoto Nobutaka 13
#6 Suzuki Masahiro 12
#7 Fujimoto Kenzo 10
#8 Ariga Tomoki 8
#9 Takamura Yuzuru 7
#10 Tagashira Yuki 6

Latest patents

Publication Filing date Title
WO2020158687A1 Method of producing photoreactive nucleotide analog
WO2020105518A1 Pollen supplying method
WO2020017651A1 Photodegradable hydrogel
WO2019078311A1 Method for manufacturing substantially 1fl bodies shaped as capsules, and device used for same
WO2019026795A1 Hydrophilic polyamide or polyimide
WO2018168785A1 Method for producing heterojunction solar cell, heterojunction solar cell and heterojunction crystalline silicon electronic device
WO2018088541A1 Hydrogel for drug release control and method for producing same
WO2018116608A1 Dielectric oxide, method for producing same, solid-state electronic device and method for producing said solid-state electronic device
WO2018066203A1 Composite member and method for producing same
US2021084891A1 Vitreous state stabilizing agent for animal cell cryopreservation solution
US2019088501A1 Laminate, etching mask, method of producing laminate, method of producing etching mask, and method of producing thin film transistor
KR20180044851A Method for forming pzt ferroelectric film
EP3285283A1 Etching mask, etching mask precursor, method for manufacturing oxide layer, and method for manufacturing thin-film transistor
EP3236488A1 Oxide precursor, oxide layer, semiconductor element, electronic device, method for producing oxide layer, and method for producing semiconductor element
US2017162324A1 Oxide dielectric and method for manufacturing same, and solid state electronic device and method for manufacturing same
EP3240019A1 Oxide derivative, method for producing same, precursor of oxide derivative, solid-state electronic device and method for manufacturing solid-state electronic device