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VTERA TECHNOLOGY INC

Overview
  • Total Patents
    24
About

VTERA TECHNOLOGY INC has a total of 24 patent applications. Its first patent ever was published in 2002. It filed its patents most often in Taiwan, China and United States. Its main competitors in its focus markets semiconductors are JIANGYIN SAIYING ELECTRON CO LTD, APD SEMICONDUCTOR INC and CNAC CHONGQING MICROELECTRONICS CO LTD.

Patent filings in countries

World map showing VTERA TECHNOLOGY INCs patent filings in countries
# Country Total Patents
#1 Taiwan 17
#2 China 4
#3 United States 3

Patent filings per year

Chart showing VTERA TECHNOLOGY INCs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Jang Jiung-Yu 10
#2 Lai Mu-Ren 9
#3 Terashima Kazutaka 4
#4 Chang Chiung-Yu 4
#5 Zhang Jiongyu 4
#6 Shyu Shun-Hung 4
#7 Lai Muren 4
#8 Ma Li-Ching 3
#9 Chen Hsin-I 3
#10 Lai Mu-Jen 3

Latest patents

Publication Filing date Title
TWI239664B Light emitting diode array and its manufacturing method
TWI236163B Semiconductor device with a led and related packaging method
TWI229951B LED structure with high light-emitting efficiency
TWI224393B Optical device capable of emitting light
TWI229461B Light emitting diode structure
CN1567605A Gallium nitride series heterostructure photodiode
CN1567606A Gallium nitride compounds semiconductor luminous element and window layer structure thereof
US6914315B2 GaN-based heterostructure photodiode
TW200425527A Gallium nitride series hetero-structure photodiode
TW200425534A GaN compound semiconductor light emitting device and its window structure
TW200421743A Optical receiver with a filter, its manufacturing method, and optical transceiver module
TW200419819A White light-emitting diode and its manufacturing method
TW565959B Optoelectronic integrated circuit device and manufacturing method thereof
TW577183B Light-emitting device with high lattice match
TW565952B Structure and manufacturing method of phototransistor
CN1501517A Method for forming epilayers by transverse epitaxy
CN1501518A Light-emitting component with silicon carbide as substrate
TW563182B Method of forming epitaxial layer by epitaxial lateral overgrowth
TW554517B Light emitting device using 3C-SiC as substrate
TW575898B Growth method of epitaxy layer