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HERNER SCOTT BRAD

Overview
  • Total Patents
    27
  • GoodIP Patent Rank
    209,720
About

HERNER SCOTT BRAD has a total of 27 patent applications. Its first patent ever was published in 2010. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, computer technology and micro-structure and nano-technology are RAMASWAMY D V NIRMAL, PARK NAM KYUN and CHENGDU ANALOG CIRCUIT TECH INC.

Patent filings in countries

World map showing HERNER SCOTT BRADs patent filings in countries
# Country Total Patents
#1 United States 27

Patent filings per year

Chart showing HERNER SCOTT BRADs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Herner Scott Brad 27
#2 Vasquez Natividad 1
#3 Scheuerlein Roy E 1
#4 Radigan Steven J 1
#5 Nazarian Hagop 1

Latest patents

Publication Filing date Title
US2019355702A1 Light emitting device with small size and large density
US2017238419A1 Package-less LED assembly and method
US9087576B1 Low temperature fabrication method for a three-dimensional memory device and structure
US8716098B1 Selective removal method and structure of silver in resistive switching device for a non-volatile memory device
US9153623B1 Thin film transistor steering element for a non-volatile memory device
US8815696B1 Disturb-resistant non-volatile memory device using via-fill and etchback technique
US8791010B1 Silver interconnects for stacked non-volatile memory device and method
US2012305874A1 Vertical diodes for non-volatile memory device
US2012309188A1 Method to improve adhesion for a silver filled oxide via for a non-volatile memory device
US8088688B1 p+ polysilicon material on aluminum for non-volatile memory device and method
US2012112155A1 Interconnects for stacked non-volatile memory device and method
US2012108030A1 Method for obtaining smooth, continuous silver film
US2012043520A1 Disturb-resistant non-volatile memory device and method
US2012043621A1 Method for forming stackable non-volatile resistive switching memory devices
US2012012806A1 On/off ratio for non-volatile memory device and method