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BREITWISCH MATTHEW J

Overview
  • Total Patents
    32
About

BREITWISCH MATTHEW J has a total of 32 patent applications. Its first patent ever was published in 2007. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors and computer technology are HIGASHITANI MASAAKI, TC LAB INC and IOTMEMORY TECH INC.

Patent filings in countries

World map showing BREITWISCH MATTHEW Js patent filings in countries
# Country Total Patents
#1 United States 32

Patent filings per year

Chart showing BREITWISCH MATTHEW Js patent filings per year from 1900 to 2020

Focus industries

Top inventors

# Name Total Patents
#1 Breitwisch Matthew J 32
#2 Lam Chung H 20
#3 Schrott Alejandro G 14
#4 Cheek Roger W 12
#5 Joseph Eric A 12
#6 Rajendran Bipin 9
#7 Lung Hsiang-Lan 8
#8 Lam Chung Hon 7
#9 Zhu Yu 5
#10 Rainey Beth A 3

Latest patents

Publication Filing date Title
US2013026436A1 Phase change memory electrode with sheath for reduced programming current
US2012202333A1 Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process
US2012037877A1 Small footprint phase change memory cell
US2011134676A1 Resistive memory devices having a not-and (NAND) structure
US2011119214A1 Area efficient neuromorphic circuits using field effect transistors (FET) and variable resistance material
US2011115087A1 Self-aligned lower bottom electrode
US2011116307A1 Phase change memory device suitable for high temperature operation
US2011057162A1 In via formed phase change memory cell with recessed pillar heater
US2011049460A1 Single mask adder phase change memory element
US2011049462A1 Flat lower bottom electrode for phase change memory cell
US2011038199A1 Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition
US2011001111A1 Thermally insulated phase change material memory cells with pillar structure
US2010078617A1 Method to reduce a via area in a phase change memory cell
US2009294850A1 Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device
US2008265234A1 Method of Forming Phase Change Memory Cell With Reduced Switchable Volume
US2008164453A1 Uniform critical dimension size pore for pcram application