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GUO YIMIN

Overview
  • Total Patents
    45
  • GoodIP Patent Rank
    45,391
About

GUO YIMIN has a total of 45 patent applications. Its first patent ever was published in 2007. It filed its patents most often in United States and China. Its main competitors in its focus markets semiconductors, computer technology and electrical machinery and energy are NAKAYAMA MASAHIKO, CHEN WEI-CHUAN and KUMURA YOSHINORI.

Patent filings in countries

World map showing GUO YIMINs patent filings in countries
# Country Total Patents
#1 United States 44
#2 China 1

Patent filings per year

Chart showing GUO YIMINs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Guo Yimin 45
#2 Gorman Grace 3
#3 Tong Ru-Ying 2
#4 Horng Cheng 2
#5 Zhu Li-Yan 1
#6 Xiao Rongfu 1
#7 Wu Yuanhong 1
#8 Zheng Yuankai 1
#9 Wang Po-Kang 1
#10 Li Yuan 1

Latest patents

Publication Filing date Title
US2020220071A1 Perpendicular magnetoresistive elements
US2020083437A1 Magnetoresistive element having a novel cap multilayer
CN110407291A A kind of floating serialization crawler type water surface Oil sucking device
US2016336508A1 Method of making a spin-transfer-torque magnetoresistive random access memory (STT-MRAM)
US9362489B1 Method of making a magnetoresistive element
US2016293835A1 Method to make mram with small footprint
US2016260890A1 Novel perpendicular magnetoresistive elements
US2016225982A1 Mram having spin hall effect writing and method of making the same
US2016072054A1 Method to make mram with small cell size
US2016064652A1 Three-terminal stt-mram and method to make the same
US2016064651A1 Method to make three-terminal mram
US2015364676A1 Three-terminal spin transistor magnetic random access memory and the method to make the same
US2015137286A1 Method to form mram by dual ion implantation
US2015340602A1 Method to form small mram cell by collimated oxygen ion implantation
US2014339661A1 Method to make mram using oxygen ion implantation
US2014328116A1 Magnetic memory devices
US2014327096A1 Perpendicular STT-MRAM having logical magnetic shielding
US2014319632A1 Perpendicular stt-mram having permeable dielectric layers
US2014312441A1 Spin hall effect magnetic-RAM
US2014306304A1 Method of making an integrated device using oxygen ion implantation