Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US2012223414A1
Methods for increasing bottom electrode performance in carbon-based memory devices
US2010044671A1
Methods for increasing carbon nano-tube (CNT) yield in memory devices
US2009257270A1
Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
US2010245029A1
Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
US2010012912A1
Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices
US2009256130A1
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
US2009256131A1
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
