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GUO DECHAO

Overview
  • Total Patents
    46
About

GUO DECHAO has a total of 46 patent applications. Its first patent ever was published in 2009. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, machines and micro-structure and nano-technology are RACHMADY WILLY, VERTICLE INC and SHAH UDAY.

Patent filings in countries

World map showing GUO DECHAOs patent filings in countries
# Country Total Patents
#1 United States 46

Patent filings per year

Chart showing GUO DECHAOs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Guo Dechao 46
#2 Han Shu-Jen 22
#3 Wong Keith Kwong Hon 17
#4 Lin Chung-Hsun 12
#5 Yuan Jun 10
#6 Zhang Zhen 7
#7 Kulkarni Pranita 6
#8 Su Ning 6
#9 Yeh Chun-Chen 5
#10 Wang Yanfeng 5

Latest patents

Publication Filing date Title
US2014065807A1 Partially-blocked well implant to improve diode ideality with SiGe anode
US2013334602A1 Continuously scalable width and height semiconductor fins
US2013153964A1 FETs with hybrid channel materials
US2013115732A1 Method to fabricate multicrystal solar cell with light trapping surface using nanopore copolymer
US2013093018A1 Carbon implant for workfunction adjustment in replacement gate transistor
US2013093000A1 Vertical transistor having an asymmetric gate
US2013087759A1 Light emitting diode (LED) using carbon materials
US2013020658A1 Replacement gate electrode with planar work function material layers
US2012306026A1 Replacement gate electrode with a tungsten diffusion barrier layer
US2012292602A1 Self-aligned carbon electronics with embedded gate electrode
US2012248509A1 Structure and process for metal fill in replacement metal gate integration
US2012187375A1 Deposition on a nanowire using atomic layer deposition
US2012187505A1 Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation
US2012119266A1 Stressor in planar field effect transistor device
US8084346B1 Replacement metal gate method
US2012061772A1 Transistor having replacement metal gate and process for fabricating the same
US2012043585A1 Field effect transistor device with shaped conduction channel
US2012043620A1 Multiple threshold voltages in field effect transistor devices
US2012037991A1 Silicon on Insulator Field Effect Device
US2012038008A1 Field Effect Transistor Device with Self-Aligned Junction and Spacer