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GUANGXI CRYSTAL UNION PHOTOELECTRIC MAT CO LTD

Overview
  • Total Patents
    13
  • GoodIP Patent Rank
    129,126
About

GUANGXI CRYSTAL UNION PHOTOELECTRIC MAT CO LTD has a total of 13 patent applications. Its first patent ever was published in 2016. It filed its patents most often in China. Its main competitors in its focus markets surface technology and coating, materials and metallurgy and machines are SERAM COATINGS AS, INNOVATIQUE SA and LEYBOLD MATERIALS GMBH.

Patent filings in countries

World map showing GUANGXI CRYSTAL UNION PHOTOELECTRIC MAT CO LTDs patent filings in countries
# Country Total Patents
#1 China 13

Patent filings per year

Chart showing GUANGXI CRYSTAL UNION PHOTOELECTRIC MAT CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Lu Yingdong 11
#2 Zhang Beiwei 8
#3 Liang Yingxiang 7
#4 Huang Shicheng 6
#5 Mo Bin 6
#6 Huang Zuo 4
#7 Nong Hao 4
#8 Qin Dangfeng 3
#9 Wu Jianliang 3
#10 Liu Suoxin 2

Latest patents

Publication Filing date Title
CN111116194A Production method of ultrahigh-density fine-grain ITO target material
CN110747438A Binding method of high-bonding-strength rotary target material
CN110804726A Binding method of rotary target material
CN110230032A A kind of binding device and method of planar targets
CN109945643A A kind of the continuous hot-press sintering equipment and method of metal oxide vapor deposition target
CN109502553A A kind of device and method preparing metal-oxide powder
CN109624025A A kind of the injection forming mold and method of oxide target material
CN109352109A A kind of device and method of rotary target material binding
CN109161862A A kind of device and method of plane and the binding of rotary target material solution
CN108748615A A kind of the target powder rapid molding device and forming method of mating common hydraulic press
CN108097530A A kind of planar targets back metal device and method
CN106631049A Method for sintering ITO (indium tin oxide) rotating target material used in touch screen and solar cell fields under normal pressure
CN105779957A Method for metalizing back face of ITO target material