|
US2015011056A1
|
|
Variation resistant MOSFETs with superior epitaxial properties
|
|
US2014103437A1
|
|
Random Doping Fluctuation Resistant FinFET
|
|
US2015008490A1
|
|
Fluctuation resistant FinFET
|
|
WO2014020403A1
|
|
Improved fluctuation resistant fdsoi transistors with charged subchannel and reduced access resistance
|
|
US2014027853A1
|
|
Fluctuation resistant low access resistance fully depleted SOI transistor with improved channel thickness control and reduced access resistance
|
|
US2014027854A1
|
|
Fluctuation resistant FDSOI transistor with implanted subchannel
|
|
US2014027818A1
|
|
Gate recessed FDSOI transistor with sandwich of active and etch control layers
|
|
CN104247023A
|
|
Variation resistant metal-oxide-semiconductor field effect transistor (mosfet)
|
|
CN104081529A
|
|
Variation resistant metal-oxide-semiconductor field effect transistor
|
