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CHIP INTEGRATION TECH CO LTD

Overview
  • Total Patents
    29
  • GoodIP Patent Rank
    185,465
About

CHIP INTEGRATION TECH CO LTD has a total of 29 patent applications. Its first patent ever was published in 2003. It filed its patents most often in United States, Taiwan and China. Its main competitors in its focus markets semiconductors are THIRD DIMENSION 3D SC INC, SHENG LIU and SHANGHAI SVA NEC LIQUID CRYSTAL DISPLAY CO LTD.

Patent filings in countries

World map showing CHIP INTEGRATION TECH CO LTDs patent filings in countries
# Country Total Patents
#1 United States 14
#2 Taiwan 11
#3 China 4

Patent filings per year

Chart showing CHIP INTEGRATION TECH CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Jin Qinhai 15
#2 Wu Shye-Lin 11
#3 Wu Shye Lin 2

Latest patents

Publication Filing date Title
US2015035047A1 Dual trench rectifier and method for forming the same
TW201501300A Structure of dualtrench mos transistor and method of forming the same
TW201501297A Structure of dual trench rectifier and method of forming the same
TW201501298A Structure of trench-vertical double diffused mos transistor and method of forming the same
TW201501296A Structure of trench mos rectifier and method of forming the same
TW201419553A Method of forming schottky rectifier device
TW201419526A Structure of trench mos rectifier and method of forming the same
TW200921792A High switching speed two mask schottky diode with high field breakdown
TW200849402A Silicon carbide schottky diode and method of making the same
US2007293028A1 Method of forming low forward voltage Shottky barrier diode with LOCOS structure therein
US2007293001A1 Silicon carbide Schottky diode and method of making the same
US2007290234A1 High switching speed two mask schottky diode with high field breakdown
US2005230744A1 Schottky barrier diode and method of making the same
US2005127464A1 Schottky barrier diode and method of making the same
US6825073B1 Schottky diode with high field breakdown and low reverse leakage current
US2005029614A1 High switching speed two mask Schottky diode with high field breakdown
TWI226709B Two mask Shottky barrier diode with LOGOS structure
US2004211974A1 Two mask shottky diode with locos structure