US2014070327A1
|
|
Replacement metal gate process for CMOS integrated circuits
|
US2014017866A1
|
|
Method of substantially reducing the formation of SiGe abnormal growths on polycrystalline electrodes for strained channel PMOS transistors
|
US2010052071A1
|
|
Engineered oxygen profile in metal gate electrode and nitrided high-k gate dielectrics structure for high performance PMOS devices
|
US2009159981A1
|
|
Strain modulation in active areas by controlled incorporation of nitrogen at si-SiO2 interface
|
US2009166747A1
|
|
Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal
|
US2009090990A1
|
|
Formation of nitrogen containing dielectric layers having an improved nitrogen distribution
|
US2008268627A1
|
|
Transistor performance using a two-step damage anneal
|
US2008268603A1
|
|
Transistor performance using a two-step damage anneal
|