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GLOBAL POWER TECH BEIJING CO LTD

Overview
  • Total Patents
    12
  • GoodIP Patent Rank
    140,243
  • Filing trend
    ⇩ 33.0%
About

GLOBAL POWER TECH BEIJING CO LTD has a total of 12 patent applications. It decreased the IP activity by 33.0%. Its first patent ever was published in 2017. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, surface technology and coating and micro-structure and nano-technology are HC OPTOELECTRONIC (ZHEJIANG) CO LTD, CHONGQING SEMI CHIP ELECTRONIC CO LTD and ACEPLUX OPTOTECH INC.

Patent filings in countries

World map showing GLOBAL POWER TECH BEIJING CO LTDs patent filings in countries
# Country Total Patents
#1 China 12

Patent filings per year

Chart showing GLOBAL POWER TECH BEIJING CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Chen Tong 10
#2 Li Yunji 7
#3 Zhang Yujie 7
#4 Liu Gang 4
#5 He Jia 3
#6 Miao Qing 2
#7 Gao Yirui 2
#8 Song Anying 2
#9 Wen Zhengxin 1
#10 Zhang Feng 1

Latest patents

Publication Filing date Title
CN111509032A Silicon carbide device working in high-temperature environment and manufacturing method thereof
CN110610982A Schottky diode and preparation method thereof
CN110350024A A kind of Schottky diode and preparation method reducing forward voltage drop
CN109686792A A kind of normally-off SiC base DMOSFET device and preparation method thereof
CN109686667A A kind of SiC base MOS device and its preparation method and application
CN109801959A A kind of SiC base DMOSFET device and preparation method thereof
CN109402604A It is a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer
CN108461549A A kind of silicon carbide diode device and preparation method thereof
CN108565295A A kind of SiC schottky diode and preparation method thereof
CN107887450A A kind of structure and preparation method of the Schottky diode for improving peak point current
CN107482052A The silicon carbide power device and its manufacture method of buried N-type channel
CN107275391A Composite terminal structure and preparation method for SiC semiconductor power device