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FUKUDA CRYSTAL LABORATORY

Overview
  • Total Patents
    15
  • GoodIP Patent Rank
    109,294
  • Filing trend
    ⇩ 100.0%
About

FUKUDA CRYSTAL LABORATORY has a total of 15 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2015. It filed its patents most often in Japan, Republic of Korea and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets surface technology and coating, thermal processes and environmental technology are CZT INC, ADDON and JIANGSU XINGTELIANG TECH CO LTD.

Patent filings in countries

World map showing FUKUDA CRYSTAL LABORATORYs patent filings in countries

Patent filings per year

Chart showing FUKUDA CRYSTAL LABORATORYs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Fukuda Tsuguo 15
#2 Shiraishi Yuji 5
#3 Ando Hirotaka 4
#4 Minami Yuki 2
#5 Suzuki Shigeru 2
#6 Sarukura Nobuhiko 2
#7 Nanto Toki 2
#8 Takahashi Kazuya 2
#9 Shimizu Toshihiko 2
#10 Yamanoi Kohei 2

Latest patents

Publication Filing date Title
WO2021020539A1 Scalmgo4 single crystal, preparation method for same, and free-standing substrate
JP2018193275A HIGH-PERFORMANCE/HIGH-QUALITY Fe-Ga-BASED ALLOY SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREOF
JP2018145081A METHOD FOR MANUFACTURING HIGH PERFORMANCE Fe-Ga BASED ALLOY SINGLE CRYSTAL
JP2018177568A MANUFACTURING METHOD AND APPARATUS OF HIGH PERFORMANCE HIGH UNIFORM LARGE SCALE SINGLE CRYSTAL OF Fe-Ga BASE ALLOY
JP2018150204A Manufacturing apparatus and manufacturing method for fiber-like plate crystal
JP2018150478A Oxide eutectic material crystal for phosphor, and production method thereof
JP2018150198A LARGE-DIAMETER ScAlMgO4 SINGLE CRYSTAL, AND GROWTH METHOD AND GROWTH UNIT THEREFOR
JP2018036158A Method and system for observing beam of electromagnetic wave
JP2017222537A Crucible, and single crystal growing unit and growing method
JP2017119597A PRODUCTION METHOD OF ScAlMgO4 SINGLE CRYSTAL
JP2017110042A Fluorescent material and method for producing the same
KR20160128381A Lithium tantalate single crystal growth device and growth method
JP2016204213A Production method of zinc oxide crystal, zinc oxide crystal, scintillator material and scintillator detector